Datasheet

B2S, B4S, B6S
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Vishay General Semiconductor
Revision: 19-Aug-13
2
Document Number: 88893
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Note
(1)
On glass epoxy PCB mounted on 0.05" x 0.05" (1.3 mm x 1.3 mm) pads

RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Derating Curve for Output Rectified Current
Fig. 2 - Maximum Non-Repetitive Peak Forward Surge
Current Per Diode
Fig. 3 - Typical Forward Voltage Characteristics Per Diode
Fig. 4 - Typical Reverse Leakage Characteristics Per Diode
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL B2S B4S B6S UNIT
Typical thermal resistance
(1)
R
JA
90
°C/W
R
JL
40
ORDERING INFORMATION (Example)
PREFERRED P/N UNIT WEIGHT (g) PREFERRED PACKAGE CODE BASE QUANTITY DELIVERY MODE
B2S-E3/80 0.22 80 3000 13" diameter paper tape and reel
0
20
40
60
80
100
120
140
160
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0
.8
Glass
Epoxy
PCB
Resistive or Inductive Load
Ambient Tem
p
erature
(
°C
)
Average Forward Rectified Current (A)
1
10
100
0
5
10
15
20
25
30
35
f = 50 Hz
Number of Cycles
Peak Forward Surge Current (A)
1.0 Cycle
0.4
0.6
0.8
1.0
1.2
1.4
0.01
0.1
1
10
0.5
0.7
0.9
1.1
1.3
Instantaneous Forward Voltage (V)
Instantaneous Forward Current (A)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C
20
40
60
80
100
0.01
0.1
1
10
100
90
70
50
30
10
1000
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Leakage
Current (µA)
T
J
= 150 °C
T
J
= 125 °C
T
J
= 25 °C