Datasheet

www.vishay.com
2
Document Number 83604
Rev. 1.3, 26-Apr-04
VISHAY
6N135/ 6N136
Vishay Semiconductors
Output
Coupler
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
Parameter Test condition Symbol Value Unit
Supply voltage V
S
- 0.5 to 15 V
Output voltage V
O
- 0.5 to 15 V
Emitter-base voltage V
EBO
5.0 V
Output current I
O
8.0 mA
Maximum output current 16 mA
Base current I
B
5.0 mA
Thermal resistance 300 K/W
Power dissipation T
amb
= 70 °C P
diss
100 mW
Parameter Test condition Symbol Value Unit
Isolation test voltage (between
emitter and detector climate per
DIN 50014 part 2, NOV 74
t = 1.0 s V
ISO
5300 V
RMS
Pollution degree (DIN VDE
0109)
2.0
Creepage ≥ 7.0 mm
Clearance ≥ 7.0 mm
Comparative tracking index per
DIN IEC112/VDE 0303 part 1,
group IIIa per DIN VDE 6110
175
Isolation resistance V
IO
= 500 V, T
amb
= 25 °C R
IO
≥ 10
12
Ω
V
IO
= 500 V, T
amb
= 100 °C R
IO
≥ 10
11
Ω
Storage temperature range T
stg
- 55 to + 125 °C
Ambient temperature range T
amb
- 55 to + 100 °C
Soldering temperature max. ≤ 10 s, dip soldering
≥ 0.5 mm from case bottom
T
sld
260 °C
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage I
F
= 16 mA V
F
1.6 1.9 V
Breakdown voltage I
R
= 10 µAV
BR
5.0 V
Reverse current V
R
= 5.0 V I
R
0.5 10 µA
Capacitance V
R
= 0 V, f = 1.0 MHz C
O
125 pF
Temperature coefficient, forward voltage I
F
= 16 mA ∆V
F
/∆T
A
-1.7 mV/°C