Datasheet
VISHAY
6N135/ 6N136
Document Number 83604
Rev. 1.3, 26-Apr-04
Vishay Semiconductors
www.vishay.com
1
i179081
1
2
3
4
8
7
6
5
C(V
CC
)
NC
A
C
NC
B(V
B
)
C(V
O
)
E (GND)
High Speed Optocoupler, 1 MBd, Photodiode with Transistor
Output
Features
• Isolation Test Voltage: 5300 V
RMS
• TTL Compatible
• High Bit Rates: 1.0 Mbit/s
• High Common-Mode Interference Immunity
• Bandwidth 2.0 MHz
• Open-Collector Output
• External Base Wiring Possible
Agency Approvals
• UL - File No. E52744 System Code H or J
• DIN EN 60747-5-2(VDE0884)
DIN EN 60747-5-5 pending
Available with Option 1
• CSA 93751
Description
The 6N135 and 6N136 are optocouplers with a GaA-
IAs infrared emitting diode, optically coupled with an
integrated photo detector which consists of a photo
diode and a high-speed transistor in a DIP-8 plastic
package.
Signals can be transmitted between two electrically
separated circuits up to frequencies of 2.0 MHz. The
potential difference between the circuits to be coupled
should not exceed the maximum permissible refer-
ence voltages
Order Information
For additional information on the available options refer to
Option Information.
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Part Remarks
6N135 CTR ≥ 7 %, DIP-8
6N136 CTR ≥ 19 %, DIP-8
6N135-X007 CTR ≥ 7 %, SMD-8 (option 7)
6N136-X006 CTR ≥ 19 %, DIP-8 400 mil (option 6)
6N136-X007 CTR ≥ 19 %, SMD-8 (option 7)
6N136-X009 CTR ≥ 19 %, SMD-8 (option 9)
Parameter Test condition Symbol Value Unit
Reverse voltages V
R
5.0 V
Forward current I
F
25 mA
Peak forward current t = 1.0 ms, duty cycle 50 % I
FSM
50 mA
Maximum surge forward current t ≤ 1.0 µs, 300 pulses/s 1.0 A
Thermal resistance R
th
700 K/W
Power dissipation T
amb
= 70 °C P
diss
45 mW