Datasheet

4N35/ 4N36/ 4N37/ 4N38
Document Number 83717
Rev. 1.5, 27-Jan-05
Vishay Semiconductors
www.vishay.com
3
Electrical Characteristics
T
amb
= 25 °C, unless otherwise specified
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
Input
1)
Indicates JEDEC registered value
Output
1)
Indicates JEDEC registered value
Coupler
1)
Indicates JEDEC registered value
Parameter Test condition Symbol Min Ty p. Max Unit
Forward voltage
1)
I
F
= 10 mA V
F
1.3 1.5 V
I
F
= 10 mA, T
amb
= - 55 °C V
F
0.9 1.3 1.7 V
Reverse current
1)
V
R
= 6.0 V I
R
0.1 10 µA
Capacitance V
R
= 0, f = 1.0 MHz C
O
25 pF
Parameter Test condition Part Symbol Min Typ. Max Unit
Collector-emitter breakdown
voltage
1)
I
C
= 1.0 mA 4N35 BV
CEO
30 V
4N36 BV
CEO
30 V
4N37 BV
CEO
30 V
4N38 BV
CEO
80 V
Emitter-collector breakdown
voltage
1)
I
E
= 100 µABV
ECO
7.0 V
Collector-base breakdown
voltage
1)
I
C
= 100 µA, I
B
= 1.0 µA4N35BV
CBO
70 V
4N36 BV
CBO
70 V
4N37 BV
CBO
70 V
4N38 BV
CBO
80 V
Collector-emitter leakage
current
1)
V
CE
= 10 V, I
F
= 0 4N35 I
CEO
5.0 50 nA
4N36 I
CEO
5.0 50 nA
V
CE
= 10 V, I
F
=0 4N37 I
CEO
5.0 50 nA
V
CE
= 60 V, I
F
= 0 4N38 I
CEO
50 nA
V
CE
= 30 V, I
F
= 0, T
amb
=
100 °C
4N35 I
CEO
500 µA
4N36 I
CEO
500 µA
4N37 I
CEO
500 µA
V
CE
= 60 V, I
F
= 0, T
amb
=
100 °C
4N38 I
CEO
6.0 µA
Collector-emitter capacitance V
CE
= 0 C
CE
6.0 pF
Parameter Test condition Symbol Min Ty p. Max Unit
Resistance, input to output
1)
V
IO
= 500 V R
IO
10
11
Ω
Capacitance (input-output) f = 1.0 MHz C
IO
0.5 pF