Datasheet

www.vishay.com
2
Document Number 83717
Rev. 1.5, 27-Jan-05
4N35/ 4N36/ 4N37/ 4N38
Vishay Semiconductors
Absolute Maximum Ratings
T
amb
= 25 °C, unless otherwise specified
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is
not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
Maximum Rating for extended periods of the time can adversely affect reliability.
Input
Output
Coupler
Parameter Test condition Symbol Value Unit
Reverse voltage V
R
6.0 V
Forward current I
F
60 mA
Surge current ≤ 10 µsI
FSM
2.5 A
Power dissipation P
diss
100 mW
Parameter Test condition Symbol Value Unit
Collector-emitter breakdown
voltage
V
CEO
70 V
Emitter-base breakdown
voltage
V
EBO
7.0 V
Collector current I
C
50 mA
(t ≤ 1.0 ms) I
C
100 mA
Power dissipation P
diss
150 mW
Parameter Test condition Symbol Value Unit
Isolation test voltage V
ISO
5300 V
RMS
Creepage ≥ 7.0 mm
Clearance ≥ 7.0 mm
Isolation thickness between
emitter and detector
≥ 0.4 mm
Comparative tracking index per
DIN IEC 112/VDE0303,part 1
175
Isolation resistance V
IO
= 500 V, T
amb
= 25 °C R
IO
10
12
Ω
V
IO
= 500 V, T
amb
= 100 °C R
IO
10
11
Ω
Storage temperature T
stg
- 55 to + 150 °C
Operating temperature T
amb
- 55 to + 100 °C
Junction temperature T
j
100 °C
Soldering temperature max. 10 s dip soldering:
distance to seating plane
≥ 1.5 mm
T
sld
260 °C