Datasheet

Document Number: 81181 For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
Rev. 1.2, 07-Jan-10 153
Optocoupler, Phototransistor Output, with Base Connection
4N35, 4N36, 4N37
Vishay Semiconductors
DESCRIPTION
Each optocoupler consists of gallium arsenide infrared LED
and a silicon NPN phototransistor.
AGENCY APPROVALS
Underwriters laboratory file no. E52744
BSI: EN 60065:2002, EN 60950:2000
FIMKO; EN 60065, EN 60335, EN 60950 certificate no. 25156
FEATURES
Isolation test voltage 5000 V
RMS
Interfaces with common logic families
Input-output coupling capacitance < 0.5 pF
Industry standard dual-in-line 6 pin package
Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
AC mains detection
Reed relay driving
Switch mode power supply feedback
Telephone ring detection
Logic ground isolation
Logic coupling with high frequency noise rejection
i179004-5
1
2
3
6
5
4
B
C
E
A
C
NC
21842
ORDER INFORMATION
PART REMARKS
4N35 CTR > 100 %, DIP-6
4N36 CTR > 100 %, DIP-6
4N37 CTR > 100 %, DIP-6
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage V
R
6V
Forward current I
F
50 mA
Surge current t 10 μs I
FSM
1A
Power dissipation P
diss
70 mW
OUTPUT
Collector emitter breakdown voltage V
CEO
70 V
Emitter base breakdown voltage V
EBO
7V
Collector current
I
C
50 mA
t 1 ms I
C
100 mA
Power dissipation P
diss
70 mW
COUPLER
Isolation test voltage V
ISO
5000 V
RMS
Creepage 7mm
Clearance 7mm
Isolation thickness between emitter
and detector
0.4 mm

Summary of content (7 pages)