Datasheet
Document Number: 81181 For technical questions, contact: optocoupleranswers@vishay.com
www.vishay.com
Rev. 1.2, 07-Jan-10 153
Optocoupler, Phototransistor Output, with Base Connection
4N35, 4N36, 4N37
Vishay Semiconductors
DESCRIPTION
Each optocoupler consists of gallium arsenide infrared LED
and a silicon NPN phototransistor.
AGENCY APPROVALS
•
Underwriters laboratory file no. E52744
• BSI: EN 60065:2002, EN 60950:2000
•
FIMKO; EN 60065, EN 60335, EN 60950 certificate no. 25156
FEATURES
• Isolation test voltage 5000 V
RMS
• Interfaces with common logic families
• Input-output coupling capacitance < 0.5 pF
• Industry standard dual-in-line 6 pin package
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
APPLICATIONS
• AC mains detection
• Reed relay driving
• Switch mode power supply feedback
• Telephone ring detection
• Logic ground isolation
• Logic coupling with high frequency noise rejection
i179004-5
1
2
3
6
5
4
B
C
E
A
C
NC
21842
ORDER INFORMATION
PART REMARKS
4N35 CTR > 100 %, DIP-6
4N36 CTR > 100 %, DIP-6
4N37 CTR > 100 %, DIP-6
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Reverse voltage V
R
6V
Forward current I
F
50 mA
Surge current t ≤ 10 μs I
FSM
1A
Power dissipation P
diss
70 mW
OUTPUT
Collector emitter breakdown voltage V
CEO
70 V
Emitter base breakdown voltage V
EBO
7V
Collector current
I
C
50 mA
t ≤ 1 ms I
C
100 mA
Power dissipation P
diss
70 mW
COUPLER
Isolation test voltage V
ISO
5000 V
RMS
Creepage ≥ 7mm
Clearance ≥ 7mm
Isolation thickness between emitter
and detector
≥ 0.4 mm







