Datasheet

Document Number: 83725 For technical questions, contact: [e-mail]
www.vishay.com
Rev. 1.8, 07-Jan-10 133
4N25, 4N26, 4N27, 4N28
Optocoupler, Phototransistor Output,
with Base Connection
Vishay Semiconductors
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(2)
Refer to reflow profile for soldering conditions for surface mounted devices (SMD). Refer to wave profile for soldering condditions for through
hole devices (DIP).
Notes
(1)
T
amb
= 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
(2)
JEDEC registered values are 2500 V, 1500 V, 1500 V, and 500 V for the 4N25, 4N26, 4N27, and 4N28 respectively.
COUPLER
Isolation test voltage V
ISO
5000 V
RMS
Creepage distance ≥ 7mm
Clearance distance ≥ 7mm
Isolation thickness between emitter and
detector
≥ 0.4 mm
Comparative tracking index DIN IEC 112/VDE 0303, part 1 175
Isolation resistance
V
IO
= 500 V, T
amb
= 25 °C R
IO
10
12
Ω
V
IO
= 500 V, T
amb
= 100 °C R
IO
10
11
Ω
Storage temperature T
stg
- 55 to + 125 °C
Operating temperature T
amb
- 55 to + 100 °C
Junction temperature T
j
125 °C
Soldering temperature
(2)
max.10 s dip soldering:
distance to seating plane
≥ 1.5 mm
T
sld
260 °C
ELECTRICAL CHARACTERISTICS
(1)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage
(2)
I
F
= 50 mA V
F
1.3 1.5 V
Reverse current
(2)
V
R
= 3 V I
R
0.1 100 μA
Capacitance V
R
= 0 V C
O
25 pF
OUTPUT
Collector base breakdown voltage
(2)
I
C
= 100 μA BV
CBO
70 V
Collector emitter breakdown voltage
(2)
I
C
= 1 mA BV
CEO
30 V
Emitter collector breakdown voltage
(2)
I
E
= 100 μA BV
ECO
7V
I
CEO
(dark)
(2)
V
CE
= 10 V, (base open)
4N25 5 50 nA
4N26 5 50 nA
4N27 5 50 nA
4N28 10 100 nA
I
CBO
(dark)
(2)
V
CB
= 10 V,
(emitter open)
220nA
Collector emitter capacitance V
CE
= 0 C
CE
6pF
COUPLER
Isolation test voltage
(2)
Peak, 60 Hz V
IO
5000 V
Saturation voltage, collector emitter I
CE
= 2 mA, I
F
= 50 mA V
CE(sat)
0.5 V
Resistance, input output
(2)
V
IO
= 500 V R
IO
100 GΩ
Capacitance, input output f = 1 MHz C
IO
0.6 pF
ABSOLUTE MAXIMUM RATINGS
(1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT