Datasheet

VS-31DQ09, VS-31DQ09-M3, VS-31DQ10, VS-31DQ10-M3
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Vishay Semiconductors
Revision: 19-Sep-11
2
Document Number: 93321
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Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
Note
(1)
thermal runaway condition for a diode on its own heatsink
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
V
FM
(1)
3 A
T
J
= 25 °C
0.85
V
6 A 0.97
3 A
T
J
= 125 °C
0.69
6 A 0.80
Maximum reverse leakage current
See fig. 4
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
1
mA
T
J
= 125 °C 3
Typical junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C 110 pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 9.0 nH
Maximum voltage rate of charge dV/dt Rated V
R
10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
(1)
, T
Stg
- 40 to 150 °C
Maximum thermal resistance,
junction to ambient
R
thJA
DC operation
Without cooling fin
80
°C/W
Typical thermal resistance,
junction to lead
R
thJL
DC operation 15
Approximate weight
1.2 g
0.042 oz.
Marking device Case style C-16
31DQ09
31DQ10
dP
tot
dT
J
-------------
1
R
thJA
--------------<