Datasheet

30BQ040
Bulletin PD-2.439 rev. G 07/04
2
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Parameters 30BQ Units Conditions
V
FM
Max. Forward Voltage Drop (1) 0.53 V @ 3A
0.68 V @ 6A
0.43 V @ 3A
0.57 V @ 6A
I
RM
Max. Reverse Leakage Current (1) 0.5 mA T
J
= 25 °C
30 mA T
J
= 125 °C
C
T
Max. Junction Capacitance 230 pF V
R
= 5V
DC
(test signal range 100KHz to 1Mhz) 25°C
L
S
Typical Series Inductance 3.0 nH Measured lead to lead 5mm from package body
dv/dt Max. Voltage Rate of Change 10000 V/µs (Rated V
R
)
Part number 30BQ040
V
R
Max. DC Reverse Voltage (V) 40
V
RWM
Max. Working Peak Reverse Voltage (V)
Voltage Ratings
I
F(AV)
Max. Average Forward Current 3.0 A 50% duty cycle @ T
L
= 118 °C, rectangular wave form
4.0 50% duty cycle @ T
L
= 110 °C, rectangular wave form
I
FSM
Max. Peak One Cycle Non-Repetitive 2000 A 5µs Sine or 3µs Rect. pulse
Surge Current 110 10ms Sine or 6ms Rect. pulse
E
AS
Non Repetitive Avalanche Energy 6.0 mJ T
J
= 25 °C, I
AS
= 1.0A, L = 12mH
I
AR
Repetitive Avalanche Current 1.0 A Current decaying linearly to zero in 1 µsec
Frequency limited by T
J
max. Va = 1.5 x Vr typical
Parameters 30BQ Units Conditions
Absolute Maximum Ratings
Following any rated
load condition and
with rated V
RRM
applied
T
J
= 25 °C
Electrical Specifications
(1) Pulse Width < 300µs, Duty Cycle < 2%
V
R
= rated V
R
T
J
= 125 °C
Thermal-Mechanical Specifications
T
J
Max. Junction Temperature Range (*) - 55 to 150 °C
T
stg
Max. Storage Temperature Range - 55 to 150 °C
R
thJL
Max. Thermal Resistance 12 °C/W DC operation
Junction to Lead (**)
R
thJA
Max. Thermal Resistance 46 °C/W DC operation
Junction to Ambient
wt Approximate Weight 0.24 (0.008) g (oz.)
Case Style SMC Similar to DO-214AB
Device Marking IR3F
Parameters 30BQ Units Conditions
(**) Mounted 1 inch square PCB
< thermal runaway condition for a diode on its own heatsink
(*) dPtot 1
dTj Rth( j-a)