Datasheet

Document Number: 71333
S09-0857-Rev. E, 18-May-09
www.vishay.com
3
Vishay Siliconix
2N7002K
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Output Characteristics
On-Resistance vs. Drain Current
Gate Charge
0.0
0.2
0.4
0.6
0.8
1
.
0
012 345
V
DS
- Drain-to-Source Voltage (V)
- Drain Current (A)I
D
V
GS
= 10 V
3 V
5 V
4 V
6 V
7 V
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4
.
0
0 200 400 600 800 1000
I
D
- Drain Current (mA)
V
GS
= 4.5 V
V
GS
= 10 V
- On-Resistance (Ω)R
DS(on)
0
1
2
3
4
5
6
7
0.0 0.1 0.2 0.3 0.4 0.5 0.6
V
DS
= 10 V
I
D
= 250 mA
- Gate-to-Source Voltage (V)
Q
g
- Total Gate Charge (nC)
V
GS
Transfer Characteristics
Capacitance
On-Resistance vs. Junction Temperature
0
300
600
900
1200
0123456
V
GS
- Gate-to-Source Voltage (V)
- Drain Current (mA)I
D
T
J
= - 55 °C
125 °C
25 °C
0
8
16
24
32
40
0 5 10 15 20 25
V
DS
- Drain-to-Source Voltage (V)
C - Capacitance (pF)
C
rss
C
oss
C
iss
V
GS
= 0 V
0.0
0.4
0.8
1.2
1.6
2
.
0
- 50 - 25 0 2 5 5 0 7 5 100 125 150
T
J
- Junction Temperature (°C)
V
GS
= 10 V at 500 mA
V
GS
= 4.5 V
at 200 mA
(Normalized)
- On-ResistanceR
DS(on)