Datasheet

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Document Number: 71333
S09-0857-Rev. E, 18-May-09
Vishay Siliconix
2N7002K
Notes:
a. For DESIGN AID ONLY, not subject to production testing.
b. Pulse test: PW ≤ 300 µs duty cycle ≤ 2 %.
c. Switching time is essentially independent of operating temperature.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS T
A
= 25 °C, unless otherwise noted
Parameter Symbol Test Conditions
Limits
Unit Min. Typ.
a
Max.
Static
Drain-Source Breakdown Voltage
V
DS
V
GS
= 0 V, I
D
= 10 µA
60
V
Gate-Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 µA
12.5
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
= ± 20 V
± 10
µA
V
DS
= 0 V, V
GS
= ± 15 V
1
V
DS
= 0 V, V
GS
= ± 10 V
± 150 nA
V
DS
= 0 V, V
GS
= ± 10 V, T
J
= 85 °C
± 1000
V
DS
= 0 V, V
GS
= ± 5 V
± 100
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 60 V, V
GS
= 0 V
1
µA
V
DS
= 60 V, V
GS
= 0 V , T
J
= 125 °C
500
On-State Drain Current
a
I
D(on)
V
GS
= 10 V, V
DS
= 7.5 V
800
mA
V
GS
= 4.5 V, V
DS
= 10 V
500
Drain-Source On-Resistance
a
R
DS(on)
V
GS
= 10 V, I
D
= 500 mA
2
Ω
V
GS
= 4.5 V, I
D
= 200 mA
4
Forward Transconductance
a
g
fs
V
DS
= 10 V, I
D
= 200 mA
100 mS
Diode Forward Voltage
V
SD
I
S
= 200 mA, V
GS
= 0 V
1.3 V
Dynamic
a
Total Gate Charge
Q
g
V
DS
= 10 V, V
GS
= 4.5 V
I
D
≅ 250 mA
0.4 0.6 nC
Input Capacitance
C
iss
V
DS
= 25 V, V
GS
= 0 V
f = 1 MHz
30
pFOutput Capacitance
C
oss
6
Reverse Transfer Capacitance
C
rss
2.5
Switching
a, b, c
Tur n -O n T i m e
t
d(on)
V
DD
= 30 V, R
L
= 150 Ω
I
D
≅ 200 mA, V
GEN
= 10 V, R
G
= 10 Ω
25
ns
Turn-Off Time
t
d(off)
35