Datasheet

2N7000/2N7002, VQ1000J/P, BS170
Vishay Siliconix
www.vishay.com
11-4
Document Number: 70226
S-04279—Rev. F, 16-Jul-01
TYPICAL CHARACTERISTICS (T
A
= 25_C UNLESS OTHERWISE NOTED)
CapacitanceOn-Resistance vs. Drain Current
0.0
0.2
0.4
0.6
0.8
1.0
0123456
0.0
0.2
0.4
0.6
0.8
1.0
012345678
Output Characteristics Transfer Characteristics
V
DS
– Drain-to-Source Voltage (V)
V
GS
= 10, 9, 8, 7 V
6.5 V
V
GS
– Gate-to-Source Voltage (V)
T
J
= –55_C
25_C
125_C
6 V
5.5 V
5 V
4.5 V
4 V
3.5 V
3 V 2.5 V
2, 1 V
0
4
8
12
16
20
0 400 800 1200 1600 2000 2400
0.0
0.5
1.0
1.5
2.0
–55 –30 –5 20 45 70 95 120 145
0
1
2
3
4
5
6
7
0.0 0.2 0.4 0.6 0.8 1.0
0
10
20
30
40
50
60
0 5 10 15 20 25 30 35
Gate Charge
Q
g
– Total Gate Charge (pC)
V
DS
– Drain-to-Source Voltage (V)
C
rss
C
oss
C
iss
I
D
= 0.5 A
I
D
– Drain Current (A)
On-Resistance vs. Junction Temperature
V
GS
= 10 V, r
DS
@ 0.5 A
T
J
– Junction Temperature (_C)
r
DS
@ 10 V = V
GS
r
DS
@ 5 V = V
GS
V
GS
= 5 V, r
DS
@ 0.05 A
V
GS
= 0 V
f = 1 MHz
V
DS
= 30 V
I
D
– Drain Current (A)
I
D
– Drain Current (A)
r
DS(on)
– On-Resistance ( Ω )
C – Capacitance (pF)
V
GS
– Gate-to-Source Voltage (V)
r
DS(on)
– On-Resistance ( Ω )
(Normalized)