Datasheet

VS-20TQ0..PbF Series, VS-20TQ0..-N3
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Vishay Semiconductors
Revision: 26-Aug-11
2
Document Number: 94167
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Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
V
FM
(1)
20 A
T
J
= 25 °C
0.57
V
40 A 0.73
20 A
T
J
= 125 °C
0.51
40 A 0.67
Maximum reverse leakage curent
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
2.7
mA
T
J
= 125 °C 105
Maximum junction capacitance C
T
V
R
= 5 V
DC
, (test signal range 100 kHz to 1 MHz) 25 °C 1400 pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range
T
J
, T
Stg
- 55 to 150 °C
Maximum thermal resistance,
junction to case
R
thJC
DC operation
See fig. 4
1.50
°C/W
Typical thermal resistance,
case to heatsink
R
thCS
Mounting surface, smooth and greased 0.50
Approximate weight
2g
0.07 oz.
Mounting torque
minimum 6 (5)
kgf ·cm
(lbf ·in)
maximum 12 (10)
Marking device Case style TO-220AC
20TQ035
20TQ040
20TQ045