Datasheet

1N4448
www.vishay.com
Vishay Semiconductors
Rev. 1.3, 07-Jul-17
2
Document Number: 81858
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TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Forward Voltage vs. Junction Temperature
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 3 - Reverse Current vs. Reverse Voltage
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 5 mA V
F
0.620 0.720 V
I
F
= 100 mA V
F
1V
Reverse current
V
R
= 20 V I
R
25 nA
V
R
= 20 V, T
j
= 150 °C I
R
50 μA
V
R
= 75 V I
R
5μA
Breakdown voltage
I
R
= 100 μA, t
p
/T = 0.01,
t
p
= 0.3 ms
V
(BR)
100 V
Diode capacitance V
R
= 0, f = 1 MHz, V
HF
= 50 mV C
D
4pF
Rectification efficiency V
HF
= 2 V, f = 100 MHz ηr45 %
Reverse recovery time
I
F
= I
R
= 10 mA, i
R
= 1 mA t
rr
8ns
I
F
= 10 mA, V
R
= 6 V,
i
R
= 0.1 x I
R
, R
L
= 100 Ω
t
rr
4ns
0
0.2
0.4
0.6
0.8
1.2
V- Forward Voltage (V)
F
T
j
- Junction Temperature (°C)
94 9169
1.0
I
F
= 100 mA
10 mA
1m A
0.1 mA
- 30 30 60 90 1200
0 0.4 0.8 1.2 1.6
0.1
1
10
100
1000
I - Forward Current (mA)
F
V
F
- Forward Voltage (V)
2.0
94 9171
Scattering Limit
T = 25 °C
j
1N4448
1
10
100
1000
I
R
- Reverse Current (nA)
V
R
- Reverse Voltage (V)
10 1 100
94 9098
T
j
= 25 °C
Scattering Limit