Datasheet
1N4151
Vishay Telefunken
Rev. 2, 01-Apr-99 1 (4)
www.vishay.de • FaxBack +1-408-970-5600
Document Number 85523
Silicon Epitaxial Planar Diode
Applications
Extreme fast switches
94 9367
Absolute Maximum Ratings
T
j
= 25 C
Parameter Test Conditions Type Symbol Value Unit
Repetitive peak reverse voltage V
RRM
75 V
Reverse voltage V
R
50 V
Peak forward surge current t
p
=1 s I
FSM
2 A
Repetitive peak forward current I
FRM
500 mA
Forward current I
F
300 mA
Average forward current V
R
=0 I
FAV
150 mA
Power dissipation l=4mm, T
L
=45 C P
V
440 mW
l=4mm, T
L
25 C P
V
500 mW
Junction temperature T
j
175 C
Storage temperature range T
stg
–65...+175 C
Maximum Thermal Resistance
T
j
= 25 C
Parameter Test Conditions Symbol Value Unit
Junction ambient l=4mm, T
L
=constant R
thJA
350 K/W




