Datasheet

1N4150
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 06-Jul-17
2
Document Number: 85522
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TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Current vs. Junction Temperature Fig. 2 - Forward Current vs. Forward Voltage
PACKAGE DIMENSIONS in millimeters (inches): DO-35 (DO-204AH)
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Forward voltage
I
F
= 1 mA V
F
0.540 0.620 V
I
F
= 10 mA V
F
0.660 0.740 V
I
F
= 50 mA V
F
0.760 0.860 V
I
F
= 100 mA V
F
0.820 0.920 V
I
F
= 200 mA V
F
0.870 1 V
Reverse current
V
R
= 50 V I
R
100 nA
V
R
= 50 V, T
j
= 150 °C I
R
100 μA
Diode capacitance
V
R
= 0 V, f = 1 MHz,
V
HF
= 50 mV
C
D
2.5 pF
Reverse recovery time
I
F
= I
R
= (10 to 100) mA,
i
R
= 0.1 x I
R
, R
L
= 100 Ω
t
rr
4ns
0 40 80 120 160 200
0.01
0.1
1
10
100
I - Reverse Current (µA)
R
T
J
- Junction Temperature (°C)
94 9100
Scattering Limit
V
R
= 50 V
0 0.4 0.8 1.2 1.6
0.1
1
10
100
1000
I - Forward Current (mA)
F
V
F
- Forward Voltage (V)
2.0
94 9162
Scattering Limit
T
J
= 25 °C
94 9366
Rev. 6 - Date: 19. December 2011
Document no.: SB-V-3906.04-031(4)
26 min. [1.024] 3.9 max. [0.154] 26 min. [1.024]
Cathode Identication
1.7 [0.067] 1.3 [0.050]
3.1 min. [0.120]
Ø 0.6 max. [0.024]
Ø 0.4 min. [0.015]