Datasheet

1N4150
www.vishay.com
Vishay Semiconductors
Rev. 1.9, 06-Jul-17
1
Document Number: 85522
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Fast Switching Diodes
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MECHANICAL DATA
Case: DO-35 (DO-204AH)
Weight: approx. 125 mg
Cathode band color: black
Packaging codes / options:
TR/10K per 13" reel (52 mm tape), 50K/box
TAP/10K per ammopack (52 mm tape), 50K/box
FEATURES
Silicon epitaxial planar diode
Low forward voltage drop
AEC-Q101 qualified
High forward current capability
Material categorization:
for definitions of compliance please see
www.vishay.com/doc?99912
APPLICATIONS
High speed switch and general purpose use in computer
and industrial applications
Available
Models
PARTS TABLE
PART ORDERING CODE TYPE MARKING CIRCUIT CONFIGURATION REMARKS
1N4150 1N4150TR or 1N4150TAP 1N4150 Single Tape and reel / ammopack
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Repetitive peak reverse voltage V
RRM
50 V
Reverse voltage V
R
50 V
Peak forward surge current t
p
= 1 μs I
FSM
4A
Average peak forward current I
FRM
600 mA
Forward continuous current I
F
300 mA
Average forward current V
R
= 0 I
F(AV)
150 mA
Power dissipation
l = 4 mm, T
L
= 45 °C P
tot
440 mW
l = 4 mm, T
L
25 °C P
tot
500 mW
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air l = 4 mm, T
L
= constant R
thJA
350 K/W
Junction temperature T
j
175 °C
Storage temperature range T
stg
-65 to +175 °C

Summary of content (3 pages)