Datasheet

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Document Number: 93207
2 Revision: 06-Nov-08
11DQ09, 11DQ10
Vishay High Power Products
Schottky Rectifier, 1.1 A
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
Note
(1)
thermal runaway condition for a diode on its own heatsink
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
V
FM
(1)
1 A
T
J
= 25 °C
0.85
V
2 A 0.96
1 A
T
J
= 125 °C
0.68
2 A 0.78
Maximum reverse leakage current
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
0.5
mA
T
J
= 125 °C 1.0
Typical junction capacitance C
T
V
R
= 5 V
DC
(test signal range 100 kHz to 1 MHz) 25 °C 35 pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 8.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
(1)
, T
Stg
- 40 to 150 °C
Maximum thermal resistance,
junction to ambient
R
thJA
DC operation
Without cooling fin
100
°C/W
Typical thermal resistance,
junction to lead
R
thJL
DC operation
See fig. 4
81
Approximate weight
0.33 g
0.012 oz.
Marking device Case style DO-204AL (DO-41)
11DQ09
11DQ10
dP
tot
dT
J
-------------
1
R
thJA
--------------<