Datasheet

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Document Number: 94119
2 Revision: 03-Mar-10
VS-10MQ100NPbF
Vishay High Power Products
Schottky Rectifier, 2.1 A
Note
(1)
Pulse width < 300 μs, duty cycle < 2 %
Note
(1)
thermal runaway condition for a diode on its own heatsink
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum forward voltage drop
See fig. 1
V
FM
(1)
1 A
T
J
= 25 °C
0.78
V
1.5 A 0.85
1 A
T
J
= 125 °C
0.63
1.5 A 0.68
Maximum reverse leakage current
See fig. 2
I
RM
(1)
T
J
= 25 °C
V
R
= Rated V
R
0.1
mA
T
J
= 125 °C 1
Threshold voltage V
F(TO)
T
J
= T
J
maximum
0.52 V
Forward slope resistance r
t
78.4 mΩ
Typical junction capacitance C
T
V
R
= 10 V
DC
, T
J
= 25 °C, test signal = 1 MHz 38 pF
Typical series inductance L
S
Measured lead to lead 5 mm from package body 2.0 nH
Maximum voltage rate of change dV/dt Rated V
R
10 000 V/μs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and storage
temperature range
T
J
(1)
, T
Stg
- 55 to 150 °C
Maximum thermal resistance,
junction to ambient
R
thJA
DC operation 80 °C/W
Approximate weight
0.07 g
0.002 oz.
Marking device Case style SMA (similar D-64) V1J
dP
tot
dT
J
-------------
1
R
thJA
--------------<