Owner's Manual
IRF840
www.vishay.com
Vishay Siliconix
S21-0883-Rev. E, 30-Aug-2021
4
Document Number: 91070
For technical questions, contact:
hvm@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 8 - Maximum Safe Operating Area
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10a - Switching Time Test Circuit
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
91070_07
10
1
10
0
V
SD
, Source-to-Drain Voltage (V)
I
SD
, Reverse Drain Current (A)
0.4 1.00.80.6
25 °C
150 °C
V
GS
= 0 V
1.4
1.2
91070_08
10 µs
100 µs
1 ms
10 ms
T
C
= 25 °C
T
J
= 150 °C
Single Pulse
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
10
2
0.1
2
5
2
1
5
10
2
5
25
1
25
10
25
10
2
25
10
3
25
10
4
0.1
Operation in this area limited
by R
DS(on)
91070_09
I
D
, Drain Current (A)
T
C
, Case Temperature (°C)
0.0
2.0
4.0
6.0
8.0
25 1501251007550
Pulse width ≤ 1 µs
Duty factor ≤ 0.1 %
R
D
V
GS
R
G
D.U.T.
10 V
+
-
V
DS
V
DD
V
DS
90 %
10 %
V
GS
t
d(on)
t
r
t
d(off)
t
f
0 - 0.5
0.2
0.1
0.05
0.02
0.01
Single Pulse
(Thermal Response)
P
DM
t
1
t
2
Notes:
1. Duty Factor, D = t
1
/t
2
2. Peak T
j
= P
DM
x Z
thJC
+ T
C
91070_11
t
1
, Rectangular Pulse Duration (S)
Thermal Response (Z
thJC
)
10
-5
10
-4
10
-3
10
-2
0.1 1 10
10
2
10
1
0.1
10
-3
10
-2