Owner's Manual
IRF840
www.vishay.com
Vishay Siliconix
S21-0883-Rev. E, 30-Aug-2021
3
Document Number: 91070
For technical questions, contact:
hvm@vishay.com
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ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Fig. 1 - Typical Output Characteristics, T
C
= 25 °C
Fig. 2 - Typical Output Characteristics, T
C
= 150 °C
Fig. 3 - Typical Transfer Characteristics
Fig. 4 - Normalized On-Resistance vs. Temperature
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage
91070_01
V
DS
, Drain-to-Source Voltage (V)
I
D
, Drain Current (A)
10
1
10
0
10
0
10
1
Bottom
To p
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 µs Pulse Width
T
C
=
25 °C
4.5 V
91070_02
10
1
10
0
10
0
10
1
I
D
, Drain Current (A)
4.5 V
Bottom
To p
V
GS
15 V
10 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
4.5 V
20 µs Pulse Width
T
C
=
150 °C
V
DS
,
Drain-to-Source Voltage (V)
91070_03
25 °C
150 °C
20 µs Pulse Width
V
DS
=
50 V
10
1
10
0
I
D
, Drain Current (A)
V
GS
,
Gate-to-Source Voltage (V)
5678910
4
91070_04
3.0
0.0
0.5
1.0
1.5
2.0
2.5
- 60 - 40 - 20 0 20 40 60 80 100 120 140 160
T
J
, Junction Temperature (°C)
R
DS(on)
, Drain-to-Source On Resistance
(Normalized)
I
D
= 8.0 A
V
GS
= 10 V
91070_05
2500
2000
1500
1000
0
500
10
0
10
1
Capacitance (pF)
V
DS
,
Drain-to-Source Voltage (V)
C
iss
C
rss
C
oss
V
GS
= 0 V, f = 1 MHz
C
iss
= C
gs
+ C
gd
, C
ds
Shorted
C
rss
= C
gd
C
oss
= C
ds
+ C
gd
91070_06
Q
G
, Total Gate Charge (nC)
V
GS
, Gate-to-Source Voltage (V)
20
16
12
8
0
4
0
15
75
6045
30
I
D
= 8.0 A
For test circuit
see figure 13
V
DS
= 250 V
V
DS
= 100 V
V
DS
= 400 V