Owner's Manual

IRF840
www.vishay.com
Vishay Siliconix
S21-0883-Rev. E, 30-Aug-2021
2
Document Number: 91070
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
www.vishay.com/doc?91000
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)
b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %
THERMAL RESISTANCE RATINGS
PARAMETER SYMBOL TYP. MAX. UNIT
Maximum junction-to-ambient R
thJA
-62
°C/WCase-to-sink, flat, greased surface R
thCS
0.50 -
Maximum junction-to-case (drain) R
thJC
-1.0
SPECIFICATIONS (T
J
= 25 °C, unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT
Static
Drain-source breakdown voltage V
DS
V
GS
= 0 V, I
D
= 250 μA 500 - - V
V
DS
temperature coefficient ∆V
DS
/T
J
Reference to 25 °C, I
D
= 1 mA - 0.78 - V/°C
Gate-source threshold voltage V
GS(th)
V
DS
= V
GS
, I
D
= 250 μA 2.0 - 4.0 V
Gate-source leakage I
GSS
V
GS
= ± 20 V - - ± 100 nA
Zero gate voltage drain current I
DSS
V
DS
= 500 V, V
GS
= 0 V - - 25
μA
V
DS
= 400 V, V
GS
= 0 V, T
J
= 125 °C - - 250
Drain-source on-state resistance R
DS(on)
V
GS
= 10 V I
D
= 4.8 A
b
- - 0.85 Ω
Forward transconductance g
fs
V
DS
= 50 V, I
D
= 4.8 A
b
4.9 - - S
Dynamic
Input capacitance C
iss
V
GS
= 0 V,
V
DS
= 25 V,
f = 1.0 MHz, see fig. 5
- 1300 -
pFOutput capacitance C
oss
-310-
Reverse transfer capacitance C
rss
-120-
Total gate charge Q
g
V
GS
= 10 V
I
D
= 8 A, V
DS
= 400 V,
see fig. 6 and 13
b
--63
nC Gate-source charge Q
gs
--9.3
Gate-drain charge Q
gd
--32
Turn-on delay time t
d(on)
V
DD
= 250 V, I
D
= 8 A
R
g
= 9.1 Ω, R
D
= 31 Ω, see fig. 10
b
-14-
ns
Rise time t
r
-23-
Turn-off delay time t
d(off)
-49-
Fall time t
f
-20-
Internal drain inductance L
D
Between lead,
6 mm (0.25") from
package and center of
die contact
-4.5-
nH
Internal source inductance L
S
-7.5-
Gate input resistance R
g
f = 1 MHz, open drain 0.6 - 2.8 Ω
Drain-Source Body Diode Characteristics
Continuous source-drain diode current I
S
MOSFET symbol
showing the
integral reverse
p - n junction diode
--8.0
A
Pulsed diode forward current
a
I
SM
--32
Body diode voltage V
SD
T
J
= 25 °C, I
S
= 8 A, V
GS
= 0 V
b
--2.0V
Body diode reverse recovery time t
rr
T
J
= 25 °C, I
F
= 8 A, dI/dt = 100 A/μs
b
- 460 970 ns
Body diode reverse recovery charge Q
rr
-4.28.9μC
Forward turn-on time t
on
Intrinsic turn-on time is negligible (turn-on is dominated by L
S
and L
D
)
D
S
G
S
D
G