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IRF840

www.vishay.com

Vishay Siliconix

S21-0883-Rev. E, 30-Aug-2021

Document Number: 91070

For technical questions, contact:

hvm@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

www.vishay.com/doc?91000

Power MOSFET

FEATURES

• Dynamic dV/dt rating

• Repetitive avalanche rated

• Fast switching

• Ease of paralleling

• Simple drive requirements

• Material categorization: for definitions of compliance

please see

www.vishay.com/doc?99912

Note

This datasheet provides information about parts that are

RoHS-compliant and / or parts that are non RoHS-compliant. For

example, parts with lead (Pb) terminations are not RoHS-compliant.

Please see the information / tables in this datasheet for details

DESCRIPTION

Third generation power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized device design, low on-resistance and

cost-effectiveness.

The TO-220AB package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220AB contribute to its

wide acceptance throughout the industry.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11)

b. V

= 50 V, starting T

= 25 °C, L = 14 mH, R

= 25 Ω, I

= 8.0 A (see fig. 12)

c. I

≤ 8.0 A, dI/dt ≤ 100 A/μs, V

≤ V

, T

≤ 150 °C

d. 1.6 mm from case

PRODUCT SUMMARY

(V) 500

DS(on)

(Ω)V

= 10 V 0.85

max. (nC) 63

(nC) 9.3

(nC) 32

Configuration Single

N-Channel MOSFET

TO-220AB

Available

ORDERING INFORMATION

Package TO-220AB

Lead (Pb)-free IRF840PbF

Lead (Pb)-free and halogen-free IRF840PbF-BE3

ABSOLUTE MAXIMUM RATINGS (T

= 25 °C, unless otherwise noted)

PARAMETER SYMBOL LIMIT UNIT

Drain-source voltage V

500 V

Gate-source voltage V

± 20 V

Continuous drain current V

at 10 V

= 25 °C

8.0

= 100 °C 5.1

Pulsed drain current

Linear derating factor 1.0 W/°C

Single pulse avalanche energy

510 mJ

Repetitive avalanche current

8.0 A

Repetitive avalanche energy

13 mJ

Maximum power dissipation T

= 25 °C P

125 W

Peak diode recovery dV/dt

dV/dt 3.5 V/ns

Operating junction and storage temperature range T

, T

stg

-55 to +150

°C

Soldering recommendations (peak temperature)

For 10 s 300

Mounting torque 6-32 or M3 screw

10 lbf · in

1.1 N · m

Summary of content (9 pages)

PAGE 1
IRF840 www.vishay.com Vishay Siliconix Power MOSFET FEATURES D • Dynamic dV/dt rating TO-220AB Available • Repetitive avalanche rated • Fast switching G Available • Ease of paralleling • Simple drive requirements S G D • Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 S Note * This datasheet provides information about parts that are RoHS-compliant and / or parts that are non RoHS-compliant.
PAGE 2
IRF840 www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum junction-to-ambient RthJA - 62 Case-to-sink, flat, greased surface RthCS 0.50 - Maximum junction-to-case (drain) RthJC - 1.0 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX.
PAGE 3
IRF840 www.vishay.com Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) ID, Drain Current (A) 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 101 4.5 V 100 20 µs Pulse Width TC = 25 °C 100 101 VDS, Drain-to-Source Voltage (V) 91070_01 3.0 RDS(on), Drain-to-Source On Resistance (Normalized) VGS Top ID = 8.0 A VGS = 10 V 2.5 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 TJ, Junction Temperature (°C) 91070_04 Fig. 1 - Typical Output Characteristics, TC = 25 °C Fig.
PAGE 4
IRF840 www.vishay.com Vishay Siliconix ISD, Reverse Drain Current (A) 8.0 ID, Drain Current (A) 150 °C 101 25 °C 4.0 2.0 VGS = 0 V 100 0.4 0.6 0.8 1.0 0.0 1.4 1.2 25 VSD, Source-to-Drain Voltage (V) 91070_07 50 75 100 125 150 TC, Case Temperature (°C) 91070_09 Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 9 - Maximum Drain Current vs. Case Temperature RD 102 VDS Operation in this area limited by RDS(on) 5 VGS 10 µs 2 ID, Drain Current (A) 6.0 D.U.T.
PAGE 5
IRF840 www.vishay.com Vishay Siliconix L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T. RG + - IAS V DD VDS 10 V 0.01 Ω tp IAS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Energy (mJ) 1200 ID 3.6 A 5.1 A Bottom 8.0 A Top 1000 800 600 400 200 0 VDD = 50 V 25 91070_12c 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T.
PAGE 6
IRF840 www.vishay.com Vishay Siliconix Peak Diode Recovery dv/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer 3 + 2 4 - - + 1 Rg • • • • 1 Driver gate drive Period P.W. + V - DD dv/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test D= P.W. Period V GS = 10 V a 2 D.U.T. ISD waveform Reverse recovery current 3 D.U.T.
PAGE 7
Package Information www.vishay.com Vishay Siliconix TO-220-1 A E F D H(1) Q ØP 3 2 L(1) 1 M* L b(1) C b e J(1) e(1) MILLIMETERS DIM. INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 J(1) 2.41 2.92 0.
PAGE 8
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