Specifications

Advance Product Information
April 27, 2005
9
TriQuint Semiconductor Texas Phone: [phone] Fax: [phone] Email: [e-mail] Web: www.triquint.com
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Packaged Dimensional Drawing TGA2922 - SG
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Bias Procedure
1. Ensure no RF power is applied to the device.
2. Pinch off device by setting Vg to –3V.
3. Increase Vd to 8.0V while monitoring drain current.
4. Increase Vg until drain current reaches 480 mA.
5. Apply RF power.
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TGA2922-SG