Specifications

Advance Product Information
April 27, 2005
3
TriQuint Semiconductor Texas Phone: [phone] Fax: [phone] Email: [e-mail] Web: www.triquint.com
TABLE III
THERMAL INFORMATION
Parameter Test Conditions T
CH
(
o
C)
R
T
JC
(
q
C/W)
T
M
(HRS)
R
θ
JC
Thermal
Resistance
(channel to backside
of package)
Vd = 8 V
I
D
= 480 mA (Quiescent)
Pdiss = 3.8 W
168
22 4 E+8
Note: Package backside SnPb soldered to carrier at 85
°
C baseplate temperature.
At saturated output power, the DC power consumption is 5.8 W with 2 W RF power
delivered to the load. Power dissipated is 3.8 W and the temperature rise in the
channel is 84
°
C.
TABLE II
RF CHARACTERIZATION TABLE
(T
A
= 25qC, Nominal)
(Vd = 8 V, Idq = 480 mA)
SYMBOL PARAMETER
TEST
CONDITION
TYPICAL UNITS
Gain Small Signal Gain F = 5.75 GHz 11 dB
IRL Input Return Loss F = 5.75 GHz 7 dB
ORL Output Return Loss F = 5.75 GHz 7 dB
P1dB Output Power @ P1dB F = 5.75 GHz 34 dBm
TGA2922-SG