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Analog Integrated Circuit Device Data
8 Freescale Semiconductor
908E621
STATIC ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
Table 3. Static Electrical Characteristics
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller
chip. Characteristics noted under conditions 9.0 V
≤ V
SUP
≤ 16 V, -40°C ≤ T
J
≤ 125°C unless otherwise noted. Typical values
noted reflect the approximate parameter mean at T
A
= 25°C under nominal conditions unless otherwise noted.
Characteristic Symbol Min Typ Max Unit
SUPPLY VOLTAGE RANGE
Nominal Operating Voltage
V
SUP1
9.0 — 16 V
Extended Operating Voltage (LIN only 8..18V)
(9)
V
SUP2
7.5 — 20 V
SUPPLY CURRENT RANGE
Normal Mode
(9)
V
SUP
= 12 V, Analog Chip in Normal Mode (PSON=1), MCU Operating
Using Internal Oscillator at 32 MHz (8.0 MHz Bus Frequency), SPI,
ESCI, ADC Enabled
Stop Mode
(9),
(10)
V
SUP
= 12 V, Voltage Regulator with limited current capability
Sleep Mode
(9),
(10)
V
SUP
= 12 V, Voltage Regulator off
I
RUN
I
STOP
I
SLEEP
—
—
—
25
40
12
—
50
20
mA
µA
µA
DIGITAL INTERFACE RATINGS (ANALOG DIE)
Output terminals RST_A
, IRQ_A, RXD (MISO probe only)
Low-state Output Voltage (I
OUT
= -1.5 mA)
High-state Output Voltage (
IOUT
= 250 uA)
V
OL
V
OH
–
3.85
–
–
0.4
–
V
Output terminal RXD - Capacitance
(11)
C
OUT
–4.0–pF
Input terminals RST_A
, PWM (SS, MOSI, TXD probe only)
Input Logic Low Voltage
Input Logic High Voltage
V
IL
V
IH
–
3.5
–
–
1.5
–
V
Input terminals - Capacitance
(11)
C
IN
–4.0–pF
Terminals IRQ_A
, RST_A - Pullup Resistor R
PULLUP1
–10–kOhm
Terminals SS
- Pullup Resistor R
PULLUP2
–100–kOhm
Terminals MOSI, SPSCK, PWM - Pull-down Resistor R
PULLDOWN
–100–kOhm
Terminal TXD - PULLup Current Source I
PULLUP
–35–µA
Notes
8. Device is fully functional, but some of the parameters might be out of spec.
9. Total current measured at GND terminals.
10. Stop and Sleep mode current will increase if V
SUP
exceeds 15 V.
11. This parameter is guaranteed by process monitoring but is not production tested.