Technical data

Analog Integrated Circuit Device Data
14 Freescale Semiconductor
908E621
STATIC ELECTRICAL CHARACTERISTICS
HALL-EFFECT SENSOR INPUT H0 - GENERAL PURPOSE INPUT MODE
(H0MS = 0)
Input Voltage Low Threshold V
LT
––1.5V
Input Voltage High Threshold V
HT
3.5 – – V
Input Voltage Hysteresis V
HH
100 – 500 mV
Pullup resistor R
PH
7.0 10 13 kΩ
HALL-EFFECT SENSOR INPUT H0 - 2PIN HALL SENSOR INPUT MODE
(H0MS = 1)
Output Voltage
V
SUP
< 17V
V
SUP
>17V
V
HALL1
V
HALL2
–
–
V
SUP
-1.2
–
–
15.8
V
Output Drop @ I
OUT
= 15mA V
H0D
––2.5V
Sense Current Threshold I
HSCT
6.0 7.9 10 mA
Sense Current Hysteresis I
HSCH
600 1650 µA
Sense Current Limitation V
HSCLIM
20 40 70 mA
ANALOG INPUT A0, A0CST
Current Source A0, A0CST
(22) (23)
CSSEL1:0 = 00
CSSEL1:0 = 01
CSSEL1:0 = 10
CSSEL1:0 = 11
I
CS1
I
CS2
I
CS3
I
CS4
–
–
–
–
40
120
320
800
–
–
–
–
µA
WAKE-UP INPUT L0
Input Voltage Threshold Low V
LT
––1.5V
Input Voltage Threshold High V
HT
3.5 – – V
Input Voltage Hysteresis V
LH
0.5 – – V
Input Current I
N
-10 – 10 µA
Wake-Up Filter Time
(24)
t
WUP
–20–µs
Notes
22. This parameter is guaranteed only if correct trimming was applied
23. The current values are optimized to read a NTC temperature sensor, e.g. EPCOS type B57861 (R25 = 3000Ω, R/T characteristic 8016)
24. This parameter is guaranteed by process monitoring but is not production tested.
Table 3. Static Electrical Characteristics (continued)
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller
chip. Characteristics noted under conditions 9.0 V ≤ V
SUP
≤ 16 V, -40°C ≤ T
J
≤ 125°C unless otherwise noted. Typical values
noted reflect the approximate parameter mean at T
A
= 25°C under nominal conditions unless otherwise noted.
Characteristic Symbol Min Typ Max Unit