Technical data

Analog Integrated Circuit Device Data
Freescale Semiconductor 11
908E621
STATIC ELECTRICAL CHARACTERISTICS
HIGH-SIDE OUTPUT HS1
Switch On Resistance
T
J
= 25°C, I
LOAD
= 1.0 A
R
DS(ON)-HS1
–185225
mΩ
Overcurrent Shutdown
I
HSOC1
6.0 – 9.0 A
Overcurrent Shutdown blanking time
(15)
t
OCB
–4-8–µs
Current to Voltage Ratio
(16)
V
ADOUT
[V] / I
HS
[A], (measured and trimmed I
HS
= 2 A)
CR
RATIOHS1
0.84 1.2 1.56 V/A
High-Side Switching Frequency
(15)
f
PWMHS
––25kHz
High-Side Free-Wheeling Diode Forward Voltage
T
J
= 25°C, I
LOAD
= 1 A
V
HSF
–0.9–V
Leakage Current
I
LeakHS
–<0.210µA
HIGH-SIDE OUTPUTS HS2 AND HS3
(17)
Switch On Resistance
T
J
= 25°C, I
LOAD
= 1.0 A
R
DS(ON)-HS23
–440500
mΩ
Overcurrent Shutdown
I
HSOC23
3.6 – 5.6 A
Overcurrent Shutdown blanking time
(15)
t
OCB
–4-8–µs
Current to Voltage Ratio
(16)
V
ADOUT
[V] / I
HS
[A], (measured and trimmed I
HS
= 2 A)
CR
RATIOHS23
1.16 1.66 2.16 V/A
High-Side Switching Frequency
(15)
f
PWMHS
––25kHz
High-Side Free-Wheeling Diode Forward Voltage
T
J
= 25°C, I
LOAD
= 1 A
V
HSF
–0.9–V
Leakage Current
I
LeakHS
–<0.210µA
Notes
15. This parameter is guaranteed by process monitoring but is not production tested.
16. This parameter is guaranteed only if correct trimming was applied.
17. The high-side HS3 can be only used for resistive loads.
Table 3. Static Electrical Characteristics (continued)
All characteristics are for the analog chip only. Refer to the 68HC908EY16 datasheet for characteristics of the microcontroller
chip. Characteristics noted under conditions 9.0 V ≤ V
SUP
≤ 16 V, -40°C ≤ T
J
≤ 125°C unless otherwise noted. Typical values
noted reflect the approximate parameter mean at T
A
= 25°C under nominal conditions unless otherwise noted.
Characteristic Symbol Min Typ Max Unit