Datasheet

MITSUBISHI
LIGHTING MATERIAL HISTORY
DEVELOPMENT MILESTONES
1950 Phosphor for black & white CRT-TV.
1961 Phosphor for colour CRT-TV.
1967 Phosphor for fluorescent tubes.
1971 GF (Gradient Freeze) GaAs wafer for LED & LD.
GaAsP epitaxial wafer by HVPE for LED.
1976 High contrast phosphor for colour CRT-TV.
1980 GaAs & GaAlAs epitaxial wafer by LPE for LED.
1982 LEC GaAs wafer for high speed electronic device & LED.
1990 Natural colour phosphor for lighting.
Phosphor for PDP-TV.
1993 780nm LD epitaxial wafer, chips for storage media.
1997 VGF GaAs wafer for LED & LD.
1998 980nm LD module for submarine communication.
GaP epitaxial wafer by LPE for LED.
2005 Nitride red phosphor for white LED (world’s first commercialisation).
2006 Encapsulation material for LED.
2008 GaN wafer by HVPE.
2009 Encapsulation material S-grade for LED.
Start of manufacturing & sales of violet chip LEDs.
2010 Alliance with Pioneer on OLED lighting business.
2011 Nitride yellow phosphor for white LED (world’s first commercialisation).
Colour tunable OLED (world’s first commercialisation).
2012 Installed SCAAT
TM
large reactor.
Developed VxRGB white LED package for lighting.
2013 LED lamp using GaN on GaN technology.
Establishment of MC Pioneer OLED Corporation, joint venture between MCC and Pioneer.
2014 Launch of OLED panel production by wet coating process.
31
Lighting
LED