Manual

Atlas DCA User Guide October 2007 – Rev 7
Page 24
Appendix A - Technical Specifications
All values are at 25
°
C unless otherwise specified.
Parameter Min Typ Max
Note
Peak test current into S/C
-
5.5mA
5.5mA
1
Peak test voltage across O/C
-
5.1V
5.1V
1
Transistor gain range (H
FE
)
4
65000
2
Transistor gain accuracy
±3% ±5 H
FE
2,8
Transistor V
CEO
test vol
tage
2.0V
3.0V
2
Transistor V
BE
accuracy
-
2%
-
20mV
+2%+20mV
8
V
BE
for Darlington
0.95V
1.00V
1.80V
3
V
BE
for Darlington (shunted)
0.75V
0.80V
1.80V
4
Acceptable transistor V
BE
1.80V
Base
-
emitter shunt threshold
50k
60k
70k
BJT collector test
current
2.45mA
2.50mA
2.55mA
BJT acceptable leakage
0.7mA
6
MOSFET gate threshold range
0.1V
5.0V
5
MOSFET threshold accuracy
-
2%
-
20mV
+2%+20mV
5
MOSFET drain test current
2.45mA
2.50mA
2.55mA
MOSFET gate resistance
8k
Depletion drain test
current
0.5mA
5.5mA
JFET drain
-
source test current
0.5mA
5.5mA
SCR/Triac gate test current
4.5mA
7
SCR/Triac load test current
5.0mA
Diode test current
5.0mA
Diode voltage accuracy
-
2%
-
20mV
+2%+20mV
V
F
for LED identification
1.50V
4.00
V
Short circuit threshold
10
Battery type
MN21 / L1028 / GP23A 12V Alkaline
Battery voltage range
7.50V
12V
Battery warning threshold
8.25V
Dimensions (body)
103 x 70 x 20 mm
1. Between any pair of test clips.
2. Collector current of 2.50mA. Gain accuracy valid for gains less than 2000.
3. Resistance across reverse biased base-emitter > 60k
.
4. Resistance across reverse biased base-emitter < 60k
.
5. Drain-source current of 2.50mA.
6. Collector-emitter voltage of 5.0V.
7. Thyristor quadrant I, Triac quadrants I and III.
8. BJT with no shunt resistors.
Please note, specifications subject to change.