Specification Sheet

7
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Absolute Maximum Ratings
Symbol
Parameter
Rating
Units
Notes
VDD
Voltage on VDD pin relative to Vss
- 0.3 V ~ 1.50 V
V
1,3
VDDQ
Voltage on VDDQ pin relative to Vss
- 0.3 V ~ 1.50 V
V
1,3
VPP
Voltage on VPP pin relative to Vss
- 0.3 V ~ 3.0 V
V
4
VIN, VOUT
Voltage on any pin except VREFCA relative to Vss
- 0.3 V ~ 1.50 V
V
1,3,5
TSTG
Storage Temperature
-55 to +100
°C
1, 2
Notes:
1. Stresses greater than those listed under “Absolute Maximum Ratings” may cause permanent damage to
the device. This is a stress rating only and functional operation of the device at these or any other conditions
above those indicated in the operational sections of this specification is not implied. Exposure to absolute
maximum rat ing conditions for extended periods may affect reliability.
2. Storage Temperature is the case surface temperature on the center/top side of the DRAM. For the measurement
conditions, please refer to JESD51-2 standard.
3. VDD and VDDQ must be within 300mV of each other at all times; and VREFCA must be not greater than
0.6XVDDQ, When VDD and VDDQ are less than 500mV; VREFCA may be equal to or less than 300mV.
4. VPP must be equal or greater than VDD/VDDQ at all times
5. Overshoot area above 1.5V is specified in DDR4 Device Operation.
AC & DC Operating Conditions
NOTE:
1.Under all conditions VDDQ must be less than or equal to VDD.
2.VDDQ tracks with VDD. AC parameters are measured with VDD and VDDQ tied together.
3. DC bandwidth is limited to 20MHz.
Symbol
Parameter
Rating
Unit
NOTE
Min.
Typ.
Max.
VDD
Supply Voltage
1.14
1.2
1.26
V
1,2,3
VDDQ
Supply Voltage for Output
1.14
1.2
1.26
V
1,2,3
VPP
Supply Voltage for DRAM Activating
2.375
2.5
2.75
V
3