Datasheet

7-734
Specifications CD4016BMS
Absolute Maximum Ratings Reliability Information
DC Supply Voltage Range, (VDD) . . . . . . . . . . . . . . . -0.5V to +20V
(Voltage Referenced to VSS Terminals)
Input Voltage Range, All Inputs . . . . . . . . . . . . .-0.5V to VDD +0.5V
DC Input Current, Any One Input . . . . . . . . . . . . . . . . . . . . . . . .±10mA
Operating Temperature Range. . . . . . . . . . . . . . . . -55
o
C to +125
o
C
Package Types D, F, K, H
Storage Temperature Range (TSTG). . . . . . . . . . . -65
o
C to +150
o
C
Lead Temperature (During Soldering) . . . . . . . . . . . . . . . . . +265
o
C
At Distance 1/16 ± 1/32 Inch (1.59mm ± 0.79mm) from case for
10s Maximum
Thermal Resistance . . . . . . . . . . . . . . . . θ
ja
θ
jc
Ceramic DIP and FRIT Package . . . . . 80
o
C/W 20
o
C/W
Flatpack Package . . . . . . . . . . . . . . . . 70
o
C/W 20
o
C/W
Maximum Package Power Dissipation (PD) at +125
o
C
For TA = -55
o
C to +100
o
C (Package Type D, F, K) . . . . . . 500mW
For TA = +100
o
C to +125
o
C (Package Type D, F, K) . . . . .Derate
Linearity at 12mW/
o
C to 200mW
Device Dissipation per Output Transistor . . . . . . . . . . . . . . . 100mW
For TA = Full Package Temperature Range (All Package Types)
Junction Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +175
o
C
TABLE 1. DC ELECTRICAL PERFORMANCE CHARACTERISTICS
PARAMETER SYMBOL CONDITIONS (NOTE 1)
GROUP A
SUBGROUPS TEMPERATURE
LIMITS
UNITSMIN MAX
Supply Current IDD VDD = 20V, VIN = VDD or GND 1 +25
o
C - 0.5 µA
2 +125
o
C-50µA
VDD = 18V, VIN = VDD or GND 3 -55
o
C - 0.5 µA
Input Leakage Current IIL VC = VDD or GND VDD = 20 1 +25
o
C -100 - nA
2 +125
o
C -1000 - nA
VDD = 18V 3 -55
o
C -100 - nA
Input Leakage Current IIH VC = VDD or GND VDD = 20 1 +25
o
C - 100 nA
2 +125
o
C - 1000 nA
VDD = 18V 3 -55
o
C - 100 nA
Input/Output Leakage
Current (Switch Off)
IOZL VDD = 18V, VC = 0V, VIS = 18V,
VOS = 0V
1 +25
o
C -100 - nA
2 +125
o
C -1000 - nA
3 -55
o
C -100 - nA
Input/Output Leakage
Current (Switch Off)
IOZH VDD = 18V, VIS = 18V, VOS = 0V 1 +25
o
C - 100 nA
2 +125
o
C - 1000 nA
3 -55
o
C - 100 nA
N Threshold Voltage VNTH VDD = 10V, ISS = -10µA 1 +25
o
C -2.8 -0.7 V
P Threshold Voltage VPTH VSS = 0V, IDD = 10µA 1 +25
o
C 0.7 2.8 V
On-State Resistance
RL = 10K Returned to
VDD-VSS/2
RON10 VIS = VDD or VSS, VDD = 10V 1 +25
o
C - 660 Ω
2 +125
o
C - 960 Ω
3 -55
o
C - 600 Ω
RON10 VIS = 4.75V or 5.75V, VDD = 10V 1 +25
o
C - 2000 Ω
2 +125
o
C - 2600 Ω
3 -55
o
C - 1870 Ω
RON15 VIS = VDD or VSS, VDD = 15V 1 +25
o
C - 400 Ω
2 +125
o
C - 600 Ω
3 -55
o
C - 360 Ω
RON15 VIS = 7.25 or 7.75, VDD = 15V 1 +25
o
C - 850 Ω
2 +125
o
C - 1230 Ω
3 -55
o
C - 775 Ω
Functional
(Note 3)
F VDD = 2.8V, VIN = VDD or GND 7 +25
o
C VOH >
VDD/2
VOL <
VDD/2
V
VDD = 20V, VIN = VDD or GND 7 +25
o
C
VDD = 18V, VIN = VDD or GND 8A +125
o
C
VDD = 3V, VIN = VDD or GND 8B -55
o
C
Switch Threshold
RL = 100K to VDD
SWTHRH5 VDD = 5V, VC = 1.5V, VIS = GND 1, 2, 3 +25
o
C, +125
o
C, -55
o
C 4.1 - V
SWTHRH15 VDD = 15V, VC = 2V, VIS = GND 1, 2, 3 +25
o
C, +125
o
C, -55
o
C 14.1 - V