Datasheet

Semiconductor Group 2
BCX 42
BSS 63
Electrical Characteristics
at T
A = 25 ˚C, unless otherwise specified.
UnitValues
Parameter Symbol
min. typ. max.
DC characteristics
VCollector-emitter breakdown voltage
I
C = 10 mA BCX 42
BSS 63
V
(BR)CE0
125
100
–
–
–
–
MHzTransition frequency
I
C = 20 mA, VCE = 5 V, f = 20 MHz
f
T – 150 –
pFOutput capacitance
V
CB = 10 V, f = 1 MHz
C
obo –12–
AC characteristics
Collector-base breakdown voltage
1
)
I
C = 100 µA BCX 42
BSS 63
V
(BR)CB0
125
110
–
–
–
–
µACollector cutoff current
V
CE = 100 V
T
A = 85 ˚C BCX 42
T
A = 125 ˚C BCX 42
ICE0
–
–
–
–
10
75
Emitter-base breakdown voltage, I
E = 10 µA V(BR)EB0 5––
nA
nA
µA
µA
Collector cutoff current
VCB = 80 V BSS 63
V
CB = 100 V BCX 42
V
CB =80V,TA = 150 ˚C BSS 63
V
CB = 100 V, TA = 150 ˚C BCX 42
I
CB0
–
–
–
–
–
–
–
–
100
100
20
20
nAEmitter cutoff current, V
EB = 4 V IEB0 – – 100
–DC current gain
1
)
I
C = 100 µA, VCE = 1 V BCX 42
I
C = 10 mA, VCE = 5 V BSS 63
I
C = 20 mA, VCE = 5 V BSS 63
I
C = 100 mA, VCE = 1 V BCX 42
I
C = 200 mA, VCE = 1 V BCX 42
h
FE
25
30
30
63
40
–
–
–
–
–
–
–
–
–
–
VCollector-emitter saturation voltage
1
)
I
C = 300 mA, IB = 30 mA BCX 42
I
C = 25 mA, IB = 2.5 mA BSS 63
I
C = 75 mA, IB = 7.5 mA BSS 63
VCEsat
–
–
–
–
–
–
0.9
0.25
0.9
Base-emitter saturation voltage
1
)
I
C = 300 mA, IB = 30 mA BCX 42
V
BEsat – – 1.4
1
)
P
u
l
se test: t ≤ 300 µs, D = 2 %