Datasheet

Semiconductor Group 1
PNP Silicon AF and Switching Transistors BCX 42
BSS 63
Maximum Ratings
Type Ordering Code
(tape and reel)
Marking
Package
1)
Pin Configuration
BCX 42
BSS 63
Q62702-C1485
Q62702-S534
DKs
BMs
SOT-23
B E C
1 2 3
Parameter Symbol Values Unit
Collector-emitter voltage V
CE0 100 V
Collector-base voltage VCB0 110
Emitter-base voltage V
EB0 5
Collector current I
C 800 mA
Peak collector current I
CM 1A
Base current I
B 100 mA
Peak base current I
BM 200
Total power dissipation, T
S =79˚C Ptot 330 mW
Junction temperature T
j 150 ˚C
Storage temperature range T
stg – 65 … + 150
Thermal Resistance
Junction - ambient
2)
Rth JA ≤ 285 K/W
125
125
5
BSS 63 BCX 42
Junction - soldering point Rth JS ≤ 215
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm
2
Cu.
● For general AF applications
● High breakdown voltage
● Low collector-emitter saturation voltage
● Complementary types: BCX 41, BSS 64 (NPN)
5.91