Datasheet

1997 Apr 21 4
Philips Semiconductors Product specification
NPN high-voltage transistors BSR19; BSR19A
CHARACTERISTICS
T
amb
=25°C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
I
CBO
collector cut-off current
BSR19 I
E
= 0; V
CB
= 100 V − 100 nA
I
E
= 0; V
CB
= 100 V; T
amb
= 100 °C − 100 µA
I
CBO
collector cut-off current
BSR19A I
E
= 0; V
CB
= 120 V − 50 nA
I
E
= 0; V
CB
= 120 V; T
amb
= 100 °C − 50 µA
I
EBO
emitter cut-off current I
C
= 0; V
EB
=4V − 50 nA
h
FE
DC current gain I
C
= 1 mA; V
CE
=5V
BSR19 60 −
BSR19A 80 −
h
FE
DC current gain I
C
= 10 mA; V
CE
=5V
BSR19 60 250
BSR19A 80 250
h
FE
DC current gain I
C
= 50 mA; V
CE
=5V
BSR19 20 −
BSR19A 30 −
V
CEsat
collector-emitter saturation voltage I
C
= 10 mA; I
B
=1mA − 150 mV
V
CEsat
collector-emitter saturation voltage I
C
= 50 mA; I
B
=5mA
BSR19 − 250 mV
BSR19A − 200 mV
C
c
collector capacitance I
E
= 0; V
CB
=10V; f=1MHz − 6pF
f
T
transition frequency I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz 100 300 MHz