Datasheet

1997 Apr 21 3
Philips Semiconductors Product specification
NPN high-voltage transistors BSR19; BSR19A
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BSR19 − 160 V
BSR19A − 180 V
V
CEO
collector-emitter voltage open base
BSR19 − 140 V
BSR19A − 160 V
V
EBO
emitter-base voltage open collector − 6V
I
C
collector current (DC) − 300 mA
I
CM
peak collector current − 600 mA
I
B
base current (DC) − 100 mA
P
tot
total power dissipation T
amb
≤ 25 °C − 250 mW
T
stg
storage temperature −65 +150 °C
T
j
junction temperature − 150 °C
T
amb
operating ambient temperature −65 +150 °C
SYMBOL PARAMETER CONDITIONS VALUE UNIT
R
th j-a
thermal resistance from junction to ambient note 1 500 K/W