Datasheet

1997 Apr 21 2
Philips Semiconductors Product specification
NPN high-voltage transistors BSR19; BSR19A
FEATURES
• Low current (max. 300 mA)
• High voltage (max. 160 V).
APPLICATIONS
• General purpose switching and amplification
• Especially used for telephony applications.
DESCRIPTION
NPN high-voltage transistor in a SOT23 plastic package.
PNP complements: BSR20 and BSR20A.
PINNING
PIN DESCRIPTION
1 base
2 emitter
3 collector
Fig.1 Simplified outline (SOT23) and symbol.
handbook, halfpage
21
3
MAM255
Top view
2
3
1
MARKING
TYPE NUMBER MARKING CODE
BSR19 U35
BSR19A U36
QUICK REFERENCE DATA
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
CBO
collector-base voltage open emitter
BSR19 − 160 V
BSR19A − 180 V
V
CEO
collector-emitter voltage open base
BSR19 − 140 V
BSR19A − 160 V
I
CM
peak collector current − 600 mA
P
tot
total power dissipation T
amb
≤ 25 °C − 250 mW
h
FE
DC current gain I
C
= 10 mA; V
CE
=5V
BSR19 60 −
BSR19A 80 −
f
T
transition frequency I
C
= 10 mA; V
CE
= 10 V; f = 100 MHz 100 300 MHz