Datasheet

ManualsBrandsUnbranded ManualsBJTs & IGBTsN/A NPN NPN

Plastic High Power Silicon

Transistor

. . . designed for use in high power audio amplifiers utilizing

complementary or quasi complementary circuits.

• DC Current Gain —

= 30 (Min) @ I

= 2.0 Adc

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector–Emitter Voltage V

CEO

80 Vdc

Collector–Base Voltage V

CBO

80 Vdc

Emitter–Base Voltage V

EBO

5.0 Vdc

Collector Current I

10 Adc

Base Current I

6.0 Adc

Total Device Dissipation T

= 25C

Derate above 25C

720

Watts

mW/C

Operating and Storage Junction

Temperature Range

, T

stg

–55 to +150 C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction to Case θ

1.39 C/W

ON Semiconductor



 Semiconductor Components Industries, LLC, 2002

April, 2002 – Rev. 1

1 Publication Order Number:

BD809/D

BD809

BD810

10 AMPERE

POWER TRANSISTORS

PNP SILICON

60, 80 VOLTS

90 WATTS

CASE 221A–09

TO–220AB

NPN

PNP

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

Summary of content (8 pages)

PAGE 1
ON Semiconductor NPN BD809 Plastic High Power Silicon Transistor PNP BD810 . . . designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits.
PAGE 2
BD809 BD810 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎ
PAGE 3
BD809 BD810 NPN BD809 PNP BD810 500 500 TJ = 150°C 100 - 55°C 50 20 VCE = 2.0 V 10 5.0 0.2 25°C 100 - 55°C 50 20 10 5.0 1.0 2.0 IC, COLLECTOR CURRENT (AMP) 0.5 TJ = 150°C 200 25°C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN 200 10 5.0 20 VCE = 2.0 V 0.2 0.5 1.0 2.0 5.0 IC, COLLECTOR CURRENT (AMP) 10 20 2.0 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain TJ = 25°C 1.8 1.6 1.4 1.2 1.0 IC = 1.0 A 0.8 4.0 A 0.6 8.
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r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE BD809 BD810 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 0.07 0.05 0.1 SINGLE P(pk) PULSE 0.05 0.03 0.02 0.01 0.01 θJC(t) = r(t) θJC D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) θJC(t) 0.02 SINGLE PULSE 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 t, PULSE WIDTH (ms) 20 30 50 t1 t2 DUTY CYCLE, D = t1/t2 100 200 300 500 1000 Figure 6.
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BD809 BD810 Notes http://onsemi.
PAGE 6
BD809 BD810 Notes http://onsemi.
PAGE 7
BD809 BD810 PACKAGE DIMENSIONS TO–220 CASE 221A–09 ISSUE AA –T– B SEATING PLANE C F T S 4 DIM A B C D F G H J K L N Q R S T U V Z A Q 1 2 3 U H K Z L R V J G D N STYLE 1: PIN 1. 2. 3. 4. NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. BASE COLLECTOR EMITTER COLLECTOR http://onsemi.com 7 INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.
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BD809 BD810 ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein.