Datasheet

ManualsBrandsUnbranded ManualsBJTs & IGBTsTransistor (BJT) - Discrete Infineon Technologies SOT 89 1

2011-10-05

BCV28, BCV48

PNP Silicon Darlington Transistors

• For general AF applications

• High collector current

• High current gain

• Complementary types: BCV29, BCV49 (NPN)

• Pb-free (RoHS compliant) package

• Qualified according AEC Q101

Type Marking Pin Configuration Package

BCV28

BCV48

1=B

2=C

3=E

SOT89

Maximum Ratings

Parameter

Symbol Value Unit

Collector-emitter voltage

BCV28

BCV48

CEO

Collector-base voltage

BCV28

BCV48

CBO

Emitter-base voltage V

EBO

Collector current I

500 mA

Peak collector current, t

≤ 10 ms I

800

Base current I

100

Peak base current I

200

Total power dissipation-

≤ 130 °C

tot

1 W

Junction temperature T

150 °C

Storage temperature T

-65 ... 150

Summary of content (7 pages)

PAGE 1
BCV28, BCV48 PNP Silicon Darlington Transistors • For general AF applications 1 2 • High collector current 3 2 • High current gain • Complementary types: BCV29, BCV49 (NPN) • Pb-free (RoHS compliant) package • Qualified according AEC Q101 Type Marking Pin Configuration Package BCV28 ED 1=B 2=C 3=E SOT89 BCV48 EE 1=B 2=C 3=E SOT89 Maximum Ratings Parameter Symbol Collector-emitter voltage VCEO Value V BCV28 30 BCV48 60 Collector-base voltage Unit VCBO BCV28 40 BCV48 80
PAGE 2
BCV28, BCV48 Thermal Resistance Parameter Junction - soldering point1) Symbol RthJS Value ≤ 20 Unit K/W 1For calculation of R thJA please refer to Application Note AN077 (Thermal Resistance Calculation) Electrical Characteristics at TA = 25°C, unless otherwise specified Parameter Symbol Values min. typ. max.
PAGE 3
BCV28, BCV48 1Pulse test: t < 300µs; D < 2% Electrical Characteristics at T A = 25°C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. fT - 200 - MHz Ccb - 4.
PAGE 4
BCV28, BCV48 DC current gain hFE = ƒ(IC) VCE = 5 V 10 6 h FE Collector-emitter saturation voltage IC = ƒ(VCEsat ), hFE = 1000 BCV 28/48 EHP00316 10 3 5 ΙC 125 ˚C 10 5 BCV 28/48 EHP00313 mA 150 ˚C 25 ˚C -50 ˚C 10 2 25 ˚C 5 5 -55 ˚C 10 4 10 1 5 5 10 3 10 -1 10 0 10 1 10 2 mA 10 10 0 3 0 0.5 1.0 ΙC Collector cutoff current ICBO = ƒ(TA) VCB = VCEmax IC = ƒ(VBEsat), hFE = 1000 BCV 28/48 EHP00314 Ι C mA 10 4 Ι CBO 150 ˚C 25 ˚C -50 ˚C 10 2 1.
PAGE 5
BCV28, BCV48 Transition frequency fT = ƒ(IC) VCE = 5 V 10 3 BCV 28/48 Collector-base capacitance Ccb = ƒ(VCB) Emitter-base capacitance Ceb = ƒ(VEB) EHP00312 16 pF MHz CCB(CEB ) fT 12 10 10 2 8 CEB 6 5 4 CCB 2 10 1 10 0 10 1 10 2 mA 0 0 10 3 4 8 12 16 V 22 VCB(VEB ΙC Total power dissipation Ptot = ƒ(TS) Permissible Pulse Load Ptotmax/PtotDC = ƒ(tp ) 1200 5 BCV 28/48 Ptot max Ptot DC mW D= Ptot tp T tp T 10 2 D= 0 0.005 0.01 0.02 0.05 0.1 0.2 0.
PAGE 6
Package SOT89 BCV28, BCV48 Package Outline 4.5 ±0.1 45˚ B 1.5 ±0.1 1) 1.6 ±0.2 0.2 MAX. 2 2.75 +0.1 -0.15 10˚ MAX. 1 ±0.2 1 0.15 4 ±0.25 1 ±0.1 1) 2.5 ±0.1 0.25 ±0.05 3 1.5 0.35 ±0.1 0.45 +0.2 -0.1 3 0.15 M B x3 0.2 B 1) Ejector pin markings possible Foot Print 1.2 1.0 2.5 2.0 0.8 0.8 0.7 Marking Layout (Example) BAW78D Type code Pin 1 2005, June Date code (YM) Manufacturer Standard Packing Reel ø180 mm = 1.000 Pieces/Reel Reel ø330 mm = 4.000 Pieces/Reel 0.2 4.
PAGE 7
BCV28, BCV48 Edition 2009-11-16 Published by Infineon Technologies AG 81726 Munich, Germany  2009 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics.