Datasheet

Semiconductor Group
2 Dec-19-1996
BC 807-16W
Electrical Characteristics at T
A
=25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA, I
B
= 0 , BC 807 W
I
C
= 10 mA, I
B
= 0 , BC 808 W
V
(BR)CEO
25
45
-
-
-
-
V
Collector-base breakdown voltage
I
C
= 10 µA, I
B
= 0 , BC 807 W
I
C
= 10 µA, I
B
= 0 , BC 808 W
V
(BR)CBO
30
50
-
-
-
-
Base-emitter breakdown voltage
I
E
= 10 µA, I
C
= 0
V
(BR)EBO
5 - -
Collector-base cutoff current
V
CB
= 25 V, T
A
= 25 °C
V
CB
= 25 V, T
A
= 150 °C
I
CBO
-
-
-
-
50
100 nA
µA
Emitter cutoff current
V
EB
= 4 V, I
C
= 0
I
EBO
- - 100
nA
DC current gain
I
C
= 100 mA, V
CE
= 1 V, BC ... 16 W
I
C
= 100 mA, V
CE
= 1 V, BC ... 25 W
I
C
= 100 mA, V
CE
= 1 V, BC ... 40 W
I
C
= 300 mA, V
CE
= 1 V, BC ... 16 W
I
C
= 300 mA, V
CE
= 1 V, BC ... 25 W
I
C
= 300 mA, V
CE
= 1 V, BC ... 40 W
h
FE
170
100
60
250
160
100
-
-
-
350
250
160
-
-
-
630
400
250
-
Collector-emitter saturation voltage 1)
I
C
= 500 mA, I
B
= 50 mA
V
CEsat
- - 0.7
V
Base-emitter saturation voltage 1)
I
C
= 500 mA, I
B
= 50 mA
V
BEsat
- - 1.2
1) Pulse test: t < 300
µ
s; D < 2%