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Rev.4.1_00

BATTERY PROTECTION IC FOR SINGLE-CELL PACK

S-8261 Series

Seiko Instruments Inc.

The S-8261 series are lithium-ion / lithium polymer rechargeabl

battery protection ICs incorporating high-accuracy voltag

detection circuit and delay circuit.

The S-8261 series are suitable for protection of single-cell lithium

ion/lithium polymer battery packs from overcharge, overdischarg

and overcurrent.

 Features

(1) Internal high accuracy voltage detection circuit

• Overcharge detection voltage 3.9 V to 4.4 V (applicable in 5 mV step) Accuracy: ±25 mV (+25 °C) and

±30 mV (−5 to +55 °C)

• Overcharge hysteresis voltage 0.1 V to 0.4 V

Accuracy: ±25 mV

The overcharge hysteresis voltage can be selected from the range 0.1 V to 0.4 V in 50 mV step.

• Overdischarge detection voltage 2.0 V to 3.0 V (applicable in 10 mV step) Accuracy: ±50 mV

• Overdischarge hysteresis voltage 0.0 V to 0.7 V

Accuracy: ±50 mV

The overdischarge hysteresis voltage can be selected from the range 0.0 V to 0.7 V in 100 mV step.

• Overcurrent 1 detection voltage 0.05 V to 0.3 V (applicable in 10 mV step) Accuracy: ±15 mV

• Overcurrent 2 detection voltage 0.5 V (fixed) Accuracy: ±100 mV

(2) High voltage device is used for charger connection pins (VM and CO pins: absolute maximum rating = 28 V).

(3) Delay times (overcharge: t

, overdischarge: t

, overcurrent 1: t

lOV1

, overcurrent 2: t

lOV2

) are generated by an internal

circuit. No external capacitor is necessary. Accuracy: ±20%

(4) Three-step overcurrent detection circuit is included (overcurrent 1, overcurrent 2 and load short-circuiting).

(5) 0 V battery charge function “Available” / “Unavailable” are selectable.

(6) Power-down function “Yes” / “No” are selectable.

(7) Charger detection function and abnormal charge current detection function

•

The overdischarge hysteresis is released by detecting negative voltage at the VM pin (

−

0.7 V typ.) (Charger detection function).

•

When the output voltage of the DO pin is high and the voltage at the VM pin is equal to or lower than the charger detection

voltage (

−

0.7 V typ.), the output voltage of the CO pin goes low (Abnormal charge current detection function).

(8) Low current consumption

• Operation mode 3.5 µA typ., 7.0 µA max.

• Power-down mode 0.1 µA max.

(9) Wide operating temperature range −40 to +85 °C

(10) Small package SOT-23-6, 6-Pin SNB(B)

(11) Lead-free products

*1. Overcharge release voltage = Overcharge detection voltage − Overcharge hysteresis voltage (where overcharge

release voltage < 3.8 V is prohibited.)

*2. Overdischarge release voltage = Overdischarge detection voltage + Overdischarge hysteresis voltage (where

overdischarge release voltage > 3.4 V is prohibited.)

 Applications

• Lithium-ion rechargeable battery packs

• Lithium polymer rechargeable battery packs

 Packages

Package name Drawing code

Package Tape Reel

SOT-23-6 MP006-A MP006-A MP006-A

6-Pin SNB(B) BD006-A BD006-A BD006-A

Summary of content (38 pages)

PAGE 1
Rev.4.1_00 BATTERY PROTECTION IC FOR SINGLE-CELL PACK S-8261 Series The S-8261 series are lithium-ion / lithium polymer rechargeable battery protection ICs incorporating high-accuracy voltage detection circuit and delay circuit. The S-8261 series are suitable for protection of single-cell lithium ion/lithium polymer battery packs from overcharge, overdischarge and overcurrent. Features (1) Internal high accuracy voltage detection circuit • Overcharge detection voltage 3.9 V to 4.
PAGE 2
BATTERY PROTECTION IC FOR SINGLE-CELL PACK S-8261 Series Rev.4.
PAGE 3
BATTERY PROTECTION IC FOR SINGLE-CELL PACK S-8261 Series Rev.4.1_00 Product Name Structure 1. Product Name 1.1 SOT-23-6 Package S-8261A xx MD - xxx T2 G IC direction in tape specifications*1 T2: SOT-23-6 Product name (abbreviation)*2 Package name (abbreviation) MD: SOT-23-6 Serial code Assigned from AA to ZZ in alphabetical order *1. Refer to the taping specifications. *2. Refer to the Product Name List. 1.
PAGE 4
BATTERY PROTECTION IC FOR SINGLE-CELL PACK S-8261 Series Rev.4.1_00 2. Product Name List (1) SOT-23-6 Table 1 Model No.
PAGE 5
BATTERY PROTECTION IC FOR SINGLE-CELL PACK S-8261 Series Rev.4.1_00 (2) 6-Pin SNB(B) Table 2 Model No. Overcharge Overcharge Overdischarge Overdischarge Overcurrent 1 detection hysteresis detection hysteresis detection voltage voltage voltage voltage voltage VCU VHC VDL VHD VIOV1 0 V battery charge function Delay time combi*1 nation S-8261AAGBD-G2G-TF S-8261AAHBD-G2H-TF S-8261AAJBD-G2J-TF S-8261AARBD-G2R-TF S-8261AASBD-G2S-TF S-8261AAVBD-G2V-TF 4.280 V 4.280 V 4.325 V 4.280 V 4.280 V 4.300 V 0.
PAGE 6
BATTERY PROTECTION IC FOR SINGLE-CELL PACK S-8261 Series Rev.4.1_00 Table 3 Delay time combination Overcharge detection delay time tCU Overdischarge detection delay time tDL (1) 1.2 s 144 ms 9 ms 2.24 ms 320 µs (2) 1.2 s 144 ms 4.5 ms 2.24 ms 320 µs (3) 4.6 s 36 ms 18 ms 9 ms 320 µs (4) 4.6 s 144 ms 9 ms 2.24 ms 320 µs (5) 4.6 s 144 ms 9 ms 4.5 ms 600 µs (6) 1.84 s 115 ms 7.2 ms 3.6 ms 488 µs (7) 1.2 s 36 ms 9 ms 2.24 ms 320 µs (8) 1.2 s 144 ms 9 ms 1.
PAGE 7
BATTERY PROTECTION IC FOR SINGLE-CELL PACK S-8261 Series Rev.4.1_00 Pin Configurations Table 5 SOT-23-6 Top view 6 5 4 1 2 3 Figure 2 2 Symbol 1 DO 2 VM 3 CO 4 5 6 DP VDD VSS Description FET gate control pin for discharge (CMOS output) Voltage detection pin between VM and VSS (Overcurrent detection pin) FET gate control pin for charge (CMOS output) Test pin for delay time measurement Positive power input pin Negative power input pin Table 6 6-Pin SNB(B) Top view 6 5 4 1 Pin No.
PAGE 8
BATTERY PROTECTION IC FOR SINGLE-CELL PACK S-8261 Series Rev.4.1_00 Absolute Maximum Ratings Table 7 Item Symbol Applied pin (Ta = 25 °C unless otherwise specified) Absolute Maximum Ratings Unit Input voltage between VDD and VSS VDS VDD VSS −0.3 to VSS +12 Input pin voltage for VM VVM VM VDD −28 to VDD +0.3 Output pin voltage for CO VCO CO VVM −0.3 to VDD+0.3 Output pin voltage for DO VDO DO VSS −0.3 to VDD +0.
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BATTERY PROTECTION IC FOR SINGLE-CELL PACK S-8261 Series Rev.4.1_00 Electrical Characteristics 1. Except Detection Delay Time (25 °C) Table 8 Item Symbol Condition Min. (Ta = 25 °C unless otherwise specified) Test Test Typ. Max. Unit Condition Circuit DETECTION VOLTAGE Overcharge detection voltage VCU = 3.9 V to 4.4 V, 5 mV Step  VCU Ta = −5 to 55 °C*1 VCU −0.025 VCU −0.030 VHC −0.025 VDL −0.050 VHD −0.050 VIOV1 −0.015 0.4 0.9 −1.0 VCU VCU VCU +0.025 VCU +0.030 VHC +0.025 VDL +0.050 VHD +0.
PAGE 10
BATTERY PROTECTION IC FOR SINGLE-CELL PACK S-8261 Series Rev.4.1_00 2. Except Detection Delay Time (−40 to +85 °C*1) Table 9 (Ta = −40 to +85 °C*1 unless otherwise specified) Item Symbol Condition DETECTION VOLTAGE Overcharge detection voltage VCU  VCU = 3.9 V to 4.4 V, 5 mV Step Overcharge hysteresis voltage VHC  VHC = 0.1 V to 0.4 V, 50 mV Step Overdischarge detection voltage VDL  VDL = 2.0 V to 3.0 V, 10 mV Step Overdischarge hysteresis voltage VHD  VHD = 0.0 V to 0.
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BATTERY PROTECTION IC FOR SINGLE-CELL PACK S-8261 Series Rev.4.1_00 3. Detection Delay Time (1) S-8261AAG, S-8261AAH, S-8261AAJ, S-8261AAL, S-8261AAM, S-8261AAN, S-8261AAO, S-8261AAP, S-8261AAR, S-8261AAZ, S-8261ABB, S-8261ABC, S-8261ABE, S-8261ABJ, S-8261ABK, S-8261ABM, S-8261ABN, S-8261ABO, S-8261ABP, S-8261ABR, S-8261ABS, S-8261ACB, S-8261ACC, S-8261ACE, S-8261ACI Table 10 Item Symbol Condition Min. Typ. Max.
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BATTERY PROTECTION IC FOR SINGLE-CELL PACK S-8261 Series (3) Rev.4.1_00 S-8261AAT Table 12 Item Symbol Condition Min. Typ. Max. Unit Test Test Condition Circuit DELAY TIME (Ta = 25°C) Overcharge detection delay time tCU  3.7 4.6 5.5 s 9 5 Overdischarge detection delay time tDL  29 36 43 ms 9 5 Overcurrent 1 detection delay time tlOV1  14 18 22 ms 10 5 Overcurrent 2 detection delay time tlOV2  7.
PAGE 13
BATTERY PROTECTION IC FOR SINGLE-CELL PACK S-8261 Series Rev.4.1_00 (5) S-8261AAV, S-8261AAY Table 14 Item Symbol Condition Min. Typ. Max. Unit Test Test Condition Circuit DELAY TIME (Ta = 25°C) Overcharge detection delay time tCU  3.7 4.6 5.5 s 9 5 Overdischarge detection delay time tDL  115 144 173 ms 9 5 Overcurrent 1 detection delay time tlOV1  7.2 9 11 ms 10 5 Overcurrent 2 detection delay time tlOV2  3.6 4.5 5.
PAGE 14
BATTERY PROTECTION IC FOR SINGLE-CELL PACK S-8261 Series (7) Rev.4.1_00 S-8261ABG, S-8261ABI, S-8261ABL, S-8261ABT Table 16 Item Symbol Condition Min. Typ. Max. Unit Test condition Test circuit DELAY TIME (Ta = 25°C) Overcharge detection delay time tCU  0.96 1.2 1.4 s 9 5 Overdischarge detection delay time tDL  29 36 43 ms 9 5 Overcurrent 1 detection delay time tlOV1  7.2 9 11 ms 10 5 Overcurrent 2 detection delay time tlOV2  1.8 2.24 2.
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BATTERY PROTECTION IC FOR SINGLE-CELL PACK S-8261 Series Rev.4.1_00 (9) S-8261ACD Table 18 Item Symbol Condition Min. Typ. Max. Unit Test Test Condition Circuit DELAY TIME (Ta = 25°C) Overcharge detection delay time tCU  0.96 1.2 1.4 s 9 5 Overdischarge detection delay time tDL  232 290 348 ms 9 5 Overcurrent 1 detection delay time tlOV1  14 18 22 ms 10 5 Overcurrent 2 detection delay time tlOV2  1.8 2.24 2.
PAGE 16
BATTERY PROTECTION IC FOR SINGLE-CELL PACK S-8261 Series Rev.4.1_00 (11) S-8261ACH Table 20 Item Symbol Condition Min. Typ. Max. Unit Test Test Condition Circuit DELAY TIME (Ta = 25°C) Overcharge detection delay time tCU  0.24 0.3 0.36 s 9 5 Overdischarge detection delay time tDL  29 36 43 ms 9 5 Overcurrent 1 detection delay time tlOV1  7.2 9 11 ms 10 5 Overcurrent 2 detection delay time tlOV2  0.89 1.12 1.
PAGE 17
Rev.4.1_00 BATTERY PROTECTION IC FOR SINGLE-CELL PACK S-8261 Series Test Circuits Caution Unless otherwise specified, the output voltage levels “H” and “L” at CO pin (VCO) and DO pin (VDO) are judged by the threshold voltage (1.0 V) of the N-channel FET. Judge the CO pin level with respect to VVM and the DO pin level with respect to VSS.
PAGE 18
BATTERY PROTECTION IC FOR SINGLE-CELL PACK S-8261 Series Rev.4.1_00 (6) Test Condition 6, Test Circuit 3 (Internal Resistance between VM and VDD, Internal Resistance between VM and VSS) The resistance between VM and VDD (RVMD) is the internal resistance between VM and VDD under the set conditions of V1 = 1.8 V and V2 = 0 V. The resistance between VM and VSS (RVMS) is the internal resistance between VM and VSS under the set conditions of V1 = 3.5 V and V2 = 1.0 V.
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BATTERY PROTECTION IC FOR SINGLE-CELL PACK S-8261 Series Rev.4.
PAGE 20
BATTERY PROTECTION IC FOR SINGLE-CELL PACK S-8261 Series Rev.4.1_00 Operation Remark Refer to the “ Battery Protection IC Connection Example”. 1. Normal Condition The S-8261 Series monitors the voltage of the battery connected between VDD pin and VSS pin and the voltage difference between VM pin and VSS pin to control charging and discharging.
PAGE 21
Rev.4.1_00 BATTERY PROTECTION IC FOR SINGLE-CELL PACK S-8261 Series 4. Overdischarge Condition For products with power-down function When the battery voltage falls below the overdischarge detection voltage (VDL) during discharging under the normal condition and the detection continues for the overdischarge detection delay time (tDL) or longer, the S-8261 Series turns the discharging control FET off to stop discharging. This condition is called the overdischarge condition.
PAGE 22
BATTERY PROTECTION IC FOR SINGLE-CELL PACK S-8261 Series Rev.4.1_00 7. Delay Circuits The detection delay times are determined by dividing a clock of the approximately 3.5 kHz with the counter. Remark 1. The detection delay time for overcurrent 2 (tIOV2) and load short-circuiting (tSHORT) start when the overcurrent 1 (VIOV1) is detected.
PAGE 23
Rev.4.1_00 BATTERY PROTECTION IC FOR SINGLE-CELL PACK S-8261 Series 8. DP Pin The DP pin is a test pin for delay time measurement and it should be open in the actual application. If a capacitor whose capacitance is larger than 1000 pF or a resistor whose resistance is less than 1 MΩ is connected to this pin, error may occur in the delay times or in the detection voltages. 9.
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BATTERY PROTECTION IC FOR SINGLE-CELL PACK S-8261 Series Rev.4.
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BATTERY PROTECTION IC FOR SINGLE-CELL PACK S-8261 Series Rev.4.
PAGE 26
BATTERY PROTECTION IC FOR SINGLE-CELL PACK S-8261 Series Rev.4.1_00 Battery Protection IC Connection Example EB+ R1 : 470 Ω VDD DP Battery C1 : 0.1 µF S-8261 Series VSS DO CO VM R2 : 2 kΩ FET1 FET2 EB− Figure 11 Table 21 Symbol Part Purpose Constant for External Components Typ. Min. Max. *1 FET1 N-channel MOS FET Discharge control    FET2 N-channel MOS FET Charge control    R1 C1 R2 *1. **2. *3. *4. *5.
PAGE 27
Rev.4.1_00 BATTERY PROTECTION IC FOR SINGLE-CELL PACK S-8261 Series Precautions • The application conditions for the input voltage, output voltage, and load current should not exceed the package power dissipation. • Do not apply an electrostatic discharge to this IC that exceeds the performance ratings of the built-in electrostatic protection circuit.
PAGE 28
BATTERY PROTECTION IC FOR SINGLE-CELL PACK S-8261 Series Rev.4.1_00 Characteristics (Typical Data) 1. Detection / Release Voltage Temperature Characteristics Overcharge detection voltage vs. temperature Overcharge release voltage vs. temperature 4.02 4.42 4.00 4.40 3.98 VCL [V] VCU [V] 4.44 4.38 4.36 4.34 −50 3.94 −25 0 25 50 Ta [°C] 75 3.92 −50 100 Overdischarge detection voltage vs. temperature VDU [V] VDL [V] 2.98 2.96 −25 0 25 50 Ta [°C] 75 75 100 75 100 3.
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BATTERY PROTECTION IC FOR SINGLE-CELL PACK S-8261 Series Rev.4.1_00 2. Current Consumption Temperature Characteristics Current consumption vs. temperature in normal mode Current consumption vs. temperature in power-down mode 0.10 5 0.08 IPDN [µA] IOPE [µA] 4 3 2 1 0 −50 0.06 0.04 0.02 −25 0 25 50 Ta [°C] 75 0 −50 100 −25 0 25 50 Ta [°C] 75 100 75 100 3.
PAGE 30
BATTERY PROTECTION IC FOR SINGLE-CELL PACK S-8261 Series Overcurrent 1 detection delay time vs. temperature Overcurrent 2 detection delay time vs. temperature 3.4 15 3.0 tIOV2 [ms] tIOV1 [ms] 13 11 9 2.6 2.2 1.8 7 5 −50 Rev.4.1_00 −25 0 25 50 Ta [°C] 75 100 75 100 1.4 −50 −25 0 25 50 Ta [°C] 75 100 Load short-circuiting delay time vs. temperature 0.40 tSHORT [ms] 0.36 0.32 0.28 0.24 0.20 0.16 −50 −25 0 25 50 Ta [°C] 5.
PAGE 31
BATTERY PROTECTION IC FOR SINGLE-CELL PACK S-8261 Series Rev.4.1_00 6. CO Pin / DO Pin Output Current Characteristics (Ta = 25°C) VDD = 3.5 V, VM = VSS = 0 V CO pin source current characteristics −0.5 CO pin sink current characteristics 0.5 0.4 ICO [mA] ICO [mA] −0.4 −0.3 −0.2 −0.1 0 0 0.3 0.2 0.1 1 2 3 0 0 4 1 2 3 VCO [V] VCO [V] VDD = 3.5 V, VM = VSS = 0 V DO pin source current characteristics −0.5 DO pin sink current characteristics 0.5 4 5 VDD = 1.8 V, VM = VSS = 0 V 0.
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2.9±0.2 1.9±0.2 6 0.95 5 1 4 2 3 +0.1 0.15 -0.05 0.95 0.35±0.15 No. MP006-A-P-SD-1.1 TITLE SOT236-A-PKG Dimensions No. MP006-A-P-SD-1.1 SCALE UNIT mm Seiko Instruments Inc.
PAGE 33
4.0±0.1(10 pitches:40.0±0.2) +0.1 ø1.5 -0 2.0±0.05 +0.2 ø1.0 -0 0.25±0.1 4.0±0.1 1.4±0.2 3.2±0.2 3 2 1 4 5 6 Feed direction No. MP006-A-C-SD-3.1 TITLE SOT236-A-Carrier Tape No. MP006-A-C-SD-3.1 SCALE UNIT mm Seiko Instruments Inc.
PAGE 34
12.5max. 9.0±0.3 Enlarged drawing in the central part ø13±0.2 (60°) (60°) No. MP006-A-R-SD-2.1 SOT236-A-Reel TITLE MP006-A-R-SD-2.1 No. SCALE UNIT QTY mm Seiko Instruments Inc.
PAGE 35
R(0.075) 6 5 4 1 2 3 (0.125) 0.14±0.05 0.2±0.08 0.2±0.08 1.8±0.15 0.5±0.1 0.8±0.05 0.5±0.1 The heatsink of back side has different electric potential depending on the product. Confirm specifications of each product. Do not use it as the function of electrode. No. BD006-A-P-SD-3.0 TITLE SNB6B-A-PKG Dimensions No. BD006-A-P-SD-3.0 SCALE UNIT mm Seiko Instruments Inc.
PAGE 36
ø1.5±0.1 4.0±0.1 2.0±0.05 ø1.1±0.1 0.25±0.05 1.1±0.1 4.0±0.1 2.2±0.1 3 2 1 4 5 6 Feed direction No. BD006-A-C-SD-2.1 TITLE SNB6B-A-Carrier Tape BD006-A-C-SD-2.1 No. SCALE UNIT mm Seiko Instruments Inc.
PAGE 37
12.5max. 9.0±0.3 Enlarged drawing in the central part ø13±0.2 No. BD006-A-R-SD-1.1 TITLE SNB6B-A-Reel No. BD006-A-R-SD-1.1 SCALE UNIT QTY. mm Seiko Instruments Inc.
PAGE 38
• • • • • • The information described herein is subject to change without notice. Seiko Instruments Inc. is not responsible for any problems caused by circuits or diagrams described herein whose related industrial properties, patents, or other rights belong to third parties. The application circuit examples explain typical applications of the products, and do not guarantee the success of any specific mass-production design.