Datasheet

TO-92 Plastic-Encapsulate Transistors
BC327 TRANSISTOR (PNP)
FEATURES
Power dissipation
MAXIMUM RATINGS (Ta
=25℃ unless otherwise noted)
Symbol Parameter Value
Unit
V
CBO
Collector-Base Voltage BC327
BC328
-50
-30
V
V
CEO
Collector-Emitter Voltage BC327
BC328
-45
-25
V
V
EBO
Emitter-Base Voltage
-5
V
I
C
Collector Current -Continuous -800
mA
P
C
Collector Power Dissipation 625
mW
T
j
Junction Temperature 150 ℃
T
stg
Storage Temperature -55-150 ℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage
BC327
BC328
V
CBO
I
C
= -100uA, I
E
=0
-50
-30
V
Collector-emitter breakdown voltage
BC327
BC328
V
CEO
I
C
= -10mA , I
B
=0
-45
-25
V
Emitter-base breakdown voltage V
EBO
I
E
= -10uA, I
C
=0 -5 V
Collector cut-off current
BC327
BC328
I
CBO
V
CB
= -45 V , I
E
=0
V
CB
= -25V , I
E
=0
-0.1
-0.1
uA
Collector cut-off current
BC327
BC328
I
CEO
V
CE
= -40 V , I
B
=0
V
CE
= -20 V , I
B
=0
-0.2
-0.2
uA
Emitter cut-off current I
EBO
V
EB
= -4 V , I
C
=0 -0.1 uA
h
FE(1)
V
CE
=-1 V, I
C
= -100mA 100 630
DC current gain
h
FE(2)
V
CE
=-1 V, I
C
= -300mA 40
Collector-emitter saturation voltage V
CE(sat)
I
C
=-500mA, I
B
= -50mA -0.7 V
Base-emitter saturation voltage V
BE(sat)
I
C
= -500mA, I
B
=-50mA -1.2 V
Base-emitter voltage V
BE
V
CE
=-1 V, I
C
= -300mA -1.2 V
Transition frequency f
T
V
CE
= -5V, I
C
= -10mA
f = 100MHz
260 MHz
Collector Output Capacitance Cob
V
CB
=-10V,I
E
=0
f=1MHZ
12 pF
CLASSIFICATION OF h
FE
Rank
16 25 40
Range
100-250 160-400 250-630
TO-92
1. COLLECTOR
2.BASE
3. EMITTER
B,Feb,2012