Datasheet

TO-92 Plastic-Encapsulate Transistors
BC337 TRANSISTOR (NPN)
FEATURES
Power dissipation
MAXIMUM RATINGS (Ta
=25℃ unless otherwise noted)
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage BC337
BC338
50
30
V
V
CEO
Collector-Emitter Voltage BC337
BC338
45
25
V
V
EBO
Emitter-Base Voltage 5 V
I
C
Collector Current -Continuous 800 mA
P
D
Total Device Dissipation 625 mW
T
j
Junction Temperature 150
℃
T
stg
Storage Temperature -55-150
℃
ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)
Parameter Symbol Test conditions MIN TYP MAX UNIT
Collector-base breakdown voltage
BC337
BC338
V
CBO
I
C
= 100uA, I
E
=0
50
30
V
V
Collector-emitter breakdown voltage
BC337
BC338
V
CEO
I
C
= 10mA , I
B
=0
45
25
V
V
Emitter-base breakdown voltage V
EBO
I
E
= 10uA, I
C
=0 5 V
Collector cut-off current BC337
BC338
I
CBO
V
CB
= 45V, I
E
=0
V
CB
= 25V, I
E
=0
0.1
0.1
uA
Collector cut-off current BC337
BC338
I
CEO
V
CE
= 40V, I
B
=0
V
CE
= 20V, I
B
=0
0.2
0.2
uA
Emitter cut-off current I
EBO
V
EB
= 4 V, I
C
=0 0.1 uA
BC337/BC338
BC337-16/BC338-16
BC337-25/BC338-25
BC337-40/BC338-40
h
FE(1)
V
CE
=1V, I
C
= 100mA
100
100
160
250
630
250
400
630
DC current gain h
FE(2)
V
CE
=1V, I
C
= 300mA 60
Collector-emitter saturation voltage V
CE(sat)
I
C
=500mA, I
B
= 50mA 0.7 V
Base-emitter saturation voltage V
BE(sat)
I
C
= 500mA, I
B
=50mA 1.2 V
Base-emitter voltage V
BE
V
CE
=1V, I
C
= 300mA 1.2 V
Transition frequency f
T
V
CE
= 5V, I
C
= 10mA
f = 100MHz
210 MHz
Collector Output Capacitance Cob
V
CB
=10V,I
E
=0
f=1MHZ
15 pF
TO-92
1. COLLECTOR
2.BASE
3. EMITTER
B,Jun,2012