Datasheet

A,May,2012
TO – 92
1. COLLECTOR
2. BASE
3. EMITTER
TO-92 Plastic-Encapsulate Transistors
BC557 TRANSISTOR (PNP)
FEATURES
z High Voltage
z Complement to BC546,BC547,BC548
MAXIMUM RATINGS (T
a
=25℃ unless otherwise noted)
Symbol Parameter Value Unit
BC556 -80
BC557 -50
V
CBO
Collector-Base Voltage
BC558 -30
V
BC556 -65
BC557 -45
V
CEO
Collector-Emitter Voltage
BC558 -30
V
V
EBO
Emitter-Base Voltage -5 V
I
C
Collector Current-Continuous -0.1 A
P
C
Collector Power Dissipation 625 mW
R
θJA
Thermal Resistance from Junction to Ambient 200
℃/W
T
j
Junction Temperature 150
℃
T
stg
Storage Temperature
-55~+150
℃
B,Feb,2013