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DATASHEET

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100pcs Assortment Transistor Set

1) BC547 - TO-92 Plastic-Encapsulate Transistors @ 28pcs

2) BC557 - TO-92 Plastic-Encapsulate Transistors @ 28pcs

3) BC337 - TO-92 Plastic-Encapsulate Transistors @ 12pcs

4) BC327 - TO-92 Plastic-Encapsulate Transistors @ 12pcs

5) BC517 - TO-92 Darlington Transistors @ 6pcs

6) BC516 - TO-92 Darlington Transistors @ 6pcs

7) BD139 - TO-126 Plastic-Encapsulate Transistors @ 4pcs

8) BD140 - TO-126 Plastic-Encapsulate Transistors @ 4pcs

Version 01/15

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Distributed by Conrad Electronic SE

This data sheet is a publication by Conrad Electronic SE, Klaus-Conrad-Str. 1, D-92240 Hirschau (www.conrad.com). All rights including translation reserved. Reproduction by any method,

e.g. photocopy, microfilming, or the capture in electronic data processing systems require the prior written approval by the editor. Reprinting, also in part, is prohibited. This data represent

the technical status at the time of printing. Changes in technology and equipment reserved.

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Summary of content (24 pages)

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DATASHEET 100pcs Assortment Transistor Set Version 01/15 1) BC547 - TO-92 Plastic-Encapsulate Transistors @ 28pcs 2) BC557 - TO-92 Plastic-Encapsulate Transistors @ 28pcs 3) BC337 - TO-92 Plastic-Encapsulate Transistors @ 12pcs 4) BC327 - TO-92 Plastic-Encapsulate Transistors @ 12pcs 5) BC517 - TO-92 Darlington Transistors @ 6pcs 6) BC516 - TO-92 Darlington Transistors @ 6pcs 7) BD139 - TO-126 Plastic-Encapsulate Transistors @ 4pcs 8) BD140 - TO-126 Plastic-Encapsulate Transistors @ 4pcs Distributed by C
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TO-92 Plastic-Encapsulate Transistors TO – 92 BC547 TRANSISTOR (NPN) 1. COLLECTOR FEATURES z High Voltage z Complement to BC556,BC557,BC558 2. BASE 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Value Unit BC546 80 BC547 50 BC548 30 BC546 65 BC547 45 BC548 30 BC546 6 V BC547 6 V BC548 5 V V V IC Collector Current-Continuous 0.
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ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions BC546 Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage BC547 V(BR)CBO IC= 0.1mA,IE=0 30 BC546 65 V(BR)CEO IC=1mA,IB=0 30 BC546 6 V(BR)EBO IE=10μA,IC=0 V V 6 5 BC546 Collector cut-off current Unit V 45 BC548 BC547 Max 50 BC548 BC547 Typ 80 BC548 Collector cut-off current Min VCB=70V,IE=0 0.1 μA VCB=50V,IE=0 0.
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Typical Characteristics BC547 Static Characteristic 3.5 hFE 10000 COMMON EMITTER Ta=25℃ hFE (mA) 9.0uA 8.0uA 1000 IC 2.5 2.0 DC CURRENT GAIN 7.0uA COLLECTOR CURRENT IC COMMON EMITTER VCE= 5V 10.0uA 3.0 —— 6.0uA 5.0uA 1.5 4.0uA 1.0 3.0uA Ta=100℃ Ta=25℃ 100 2.0uA 0.5 IB=1.0uA 0.
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TO-92 Plastic-Encapsulate Transistors TO – 92 BC557 TRANSISTOR (PNP) FEATURES z High Voltage z Complement to BC546,BC547,BC548 1. COLLECTOR 2. BASE 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO Parameter Collector-Base Voltage Collector-Emitter Voltage Value BC556 -80 BC557 -50 BC558 -30 BC556 -65 BC557 -45 BC558 -30 Emitter-Base Voltage Unit V V -5 V IC Collector Current-Continuous -0.
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ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Symbol BC557 V(BR)CBO IC= -0.1mA,IE=0 BC556 -65 BC557 Typ Max Unit V(BR)CEO V -50 -30 IC=-2mA,IB=0 V -45 BC558 -30 V(BR)EBO IE=-100μA,IC=0 -5 V VCB=-70V,IE=0 -0.1 μA VCB=-45V,IE=0 -0.1 μA BC558 VCB=-25V,IE=0 -0.1 μA BC556 VCE=-60V,IB=0 -0.1 μA VCE=-40V,IB=0 -0.1 μA VCE=-25V,IB=0 -0.1 μA VEB=-5V,IC=0 -0.
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TO-92 Plastic-Encapsulate Transistors BC337 TRANSISTOR (NPN) TO-92 FEATURES Power dissipation 1. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO Parameter Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage IC Value BC337 50 BC338 30 BC337 45 BC338 25 2.BASE Unit 3.
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BC337 Typical Characterisitics hFE Static Characteristic 250 1000 800uA 720uA COMMON EMITTER Ta=25℃ 200 Ta=100℃ hFE 480uA 150 DC CURRENT GAIN COLLECTOR CURRENT IC 560uA IC (mA) 640uA —— 400uA 320uA 100 240uA 160uA 50 Ta=25℃ 100 COMMON EMITTER VCE=3V IB=80uA 0 10 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VCEsat —— 1 (V) 1000 Ta=100℃ Ta=25℃ 10 β=10 1 10 100 COLLECTOR CURRENT fT IC —— (mA) IC Ta=100℃ β=10 100 1 800 (mA) 10 100 Cob/ Cib IC (mA) —— VCB/ VEB f=
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TO-92 Plastic-Encapsulate Transistors BC327 TRANSISTOR (PNP) TO-92 FEATURES Power dissipation 1. COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) 2.BASE Symbol 3.
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Typical Characterisitics BC327 hFE Static Characteristic -300 COMMON EMITTER Ta=25℃ Ta=100℃ hFE -0.7mA -0.6mA -200 -0.5mA -0.4mA -0.3mA -100 Ta=25℃ DC CURRENT GAIN COLLECTOR CURRENT IC (mA) -0.8mA -0.2mA 100 IB=-0.
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NPN Silicon COLLECTOR 1 BASE 2 EMITTER 3 1 2 3 MAXIMUM RATINGS Rating Symbol Value Unit VCES 30 Vdc Collector – Base Voltage VCB 40 Vdc Emitter – Base Voltage Collector – Emitter Voltage CASE 29–04, STYLE 17 TO–92 (TO–226AA) VEB 10 Vdc Collector Current — Continuous IC 1.0 Adc Total Power Dissipation @ TA = 25°C Derate above 25°C PD 625 12 mW mW/°C Total Power Dissipation @ TC = 25°C Derate above 25°C PD 1.
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BC517 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Symbol Min Typ Max Unit hFE 30,000 — — — Collector – Emitter Saturation Voltage (IC = 100 mAdc, IB = 0.1 mAdc) VCE(sat) — — 1.0 Vdc Base – Emitter On Voltage (IC = 10 mAdc, VCE = 5.0 Vdc) VBE(on) — — 1.4 Vdc fT — 200 — MHz Characteristic ON CHARACTERISTICS(1) DC Current Gain (IC = 20 mAdc, VCE = 2.0 Vdc) SMALL– SIGNAL CHARACTERISTICS Current – Gain — Bandwidth Product(2) (IC = 10 mAdc, VCE = 5.
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BC517 NOISE CHARACTERISTICS (VCE = 5.0 Vdc, TA = 25°C) 500 2.0 BANDWIDTH = 1.0 Hz RS ≈ 0 i n, NOISE CURRENT (pA) en, NOISE VOLTAGE (nV) 200 BANDWIDTH = 1.0 Hz 100 10 µA 50 100 µA 20 IC = 1.0 mA 10 1.0 0.7 0.5 IC = 1.0 mA 0.3 0.2 100 µA 0.1 0.07 0.05 10 µA 0.03 5.0 10 20 50 100 200 500 1 k 2 k 5 k 10 k 20 k f, FREQUENCY (Hz) 0.02 10 20 50 k 100 k 50 100 200 50 k 100 k Figure 3. Noise Current 200 14 BANDWIDTH = 10 Hz TO 15.7 kHz 12 BANDWIDTH = 10 Hz TO 15.
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BC517 SMALL–SIGNAL CHARACTERISTICS 20 |h fe |, SMALL–SIGNAL CURRENT GAIN 4.0 TJ = 25°C C, CAPACITANCE (pF) 10 7.0 Cibo Cobo 5.0 3.0 2.0 0.04 0.1 0.2 0.4 1.0 2.0 4.0 10 VR, REVERSE VOLTAGE (VOLTS) 20 2.0 1.0 0.8 0.6 0.4 0.2 0.5 40 200 k hFE, DC CURRENT GAIN TJ = 125°C 25°C 30 k 20 k 10 k 7.0 k 5.0 k – 55°C VCE = 5.0 V 3.0 k 2.0 k 5.0 7.0 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (mA) 500 RθV, TEMPERATURE COEFFICIENTS (mV/°C) TJ = 25°C V, VOLTAGE (VOLTS) 1.
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BC517 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 D = 0.5 0.2 0.3 0.2 0.1 0.05 SINGLE PULSE 0.1 0.07 0.05 SINGLE PULSE ZθJC(t) = r(t) • RθJC TJ(pk) – TC = P(pk) ZθJC(t) ZθJA(t) = r(t) • RθJA TJ(pk) – TA = P(pk) ZθJA(t) 0.03 0.02 0.01 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 t, TIME (ms) 100 200 500 1.0 k 2.0 k 5.0 k 10 k Figure 12. Thermal Response IC, COLLECTOR CURRENT (mA) 1.0 k 700 500 300 200 FIGURE A 1.0 ms tP TA = 25°C TC = 25°C 100 µs PP 1.
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BC517 PACKAGE DIMENSIONS A NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. B R P L F SEATING PLANE K D J X X G H V C 1 SECTION X–X N N CASE 029–04 (TO–226AA) ISSUE AD 6 DIM A B C D F G H J K L N P R V INCHES MIN MAX 0.175 0.205 0.
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BC516 BC516 PNP Darlington Transistor • This device is designed for applications reguiring extremely high current gain at currents to 1mA. • Sourced from process 61. TO-92 1 1. Collector 2. Base 3.
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BC516 Package Dimensions TO-92 +0.25 4.58 ±0.20 4.58 –0.15 ±0.10 14.47 ±0.40 0.46 1.27TYP [1.27 ±0.20] 1.27TYP [1.27 ±0.20] ±0.20 (0.25) +0.10 0.38 –0.05 1.02 ±0.10 3.86MAX 3.60 +0.10 0.38 –0.05 (R2.
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TO-126 Plastic-Encapsulate Transistors BD135/137/139 TRANSISTOR (NPN) TO – 126 FEATURES z High Current z Complement To BD136, BD138 And BD140 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25 unless otherwise noted) Symbol Parameter Value Collector-Base Voltage VCBO Collector-Emitter Voltage VCEO BD135 45 BD137 60 BD139 80 BD135 45 BD137 60 BD139 80 V V 5 V IC Collector Current 1.5 A PC Collector Power Dissipation 1.
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Typical Characteristics Static Characteristic VCE= 2V hFE 250 2mA 0.3 1.8mA DC CURRENT GAIN COLLECTOR CURRENT hFE —— IC 300 COMMON EMITTER Ta=25ć IC (A) 0.4 1.6mA 1.4mA 0.2 1.2mA 1mA 0.8mA o Ta=100 C 200 150 o Ta=25 C 100 0.1 0.6mA 50 0.4mA IB=0.2mA 0.
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TO-126 Package Outline Dimensions Symbol A A1 b b1 c D E e e1 h L L1 P Dimensions In Millimeters Min Max 2.500 2.900 1.100 1.500 0.660 0.860 1.170 1.370 0.450 0.600 7.400 7.800 10.600 11.000 2.290 TYP 4.480 4.680 0.000 0.300 15.300 15.700 2.100 2.300 3.900 4.100 3.000 3.200 Dimensions In Inches Min Max 0.098 0.114 0.043 0.059 0.026 0.034 0.046 0.054 0.018 0.024 0.291 0.307 0.417 0.433 0.090 TYP 0.176 0.184 0.000 0.012 0.602 0.618 0.083 0.091 0.154 0.161 0.118 0.
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TO-126 Plastic-Encapsulate Transistors BD140 TRANSISTOR (PNP) TO – 126 FEATURES z High Current z Complement To BD139 1. EMITTER 2. COLLECTOR 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO Parameter VCEO Collector-Base Voltage Collector-Emitter Voltage VEBO Emitter-Base Voltage Value Unit -80 -80 V -5 V A V IC Collector Current -1.5 PC Collector Power Dissipation 1.
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Typical Characteristics hFE Static Characteristic 300 -180 -150 Ta=100℃ -120 hFE -0.8mA -0.7mA -0.6mA -90 -0.5mA -0.4mA -60 200 Ta=25℃ DC CURRENT GAIN COLLECTOR CURRENT IC (mA) -0.9mA IC COMMON EMITTER VCE=-2V COMMON EMITTER Ta=25℃ -1mA —— -0.3mA 100 -0.2mA -30 IB=-0.
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TO-126 Package Outline Dimensions Symbol A A1 b b1 c D E e e1 h L L1 P Φ Dimensions In Millimeters Min Max 2.500 2.900 1.100 1.500 0.660 0.860 1.170 1.370 0.450 0.600 7.400 7.800 10.600 11.000 2.290 TYP 4.480 4.680 0.000 0.300 15.300 15.700 2.100 2.300 3.900 4.100 3.000 3.200 Dimensions In Inches Min Max 0.098 0.114 0.043 0.059 0.026 0.034 0.046 0.054 0.018 0.024 0.291 0.307 0.417 0.433 0.090 TYP 0.176 0.184 0.000 0.012 0.602 0.618 0.083 0.091 0.154 0.161 0.118 0.