Specifications
Table Of Contents
- iXon Ultra
- SAFETY AND WARNINGS INFORMATION
- SAFETY AND WARNINGS SYMBOLS
- MANUAL HANDLING
- SHIPPING AND STORAGE PRECAUTIONS
- SECTION 1 - INTRODUCTION TO IXON ULTRA HARDWARE
- 1.1 - TECHNICAL SUPPORT
- 1.2 - DISCLAIMER
- 1.3 - TRADEMARKS AND PATENT INFORMATION
- 1.4 - COMPONENTS
- 1.4.1 - Camera description
- 1.4.2 - Camera Power Supply Unit
- 1.4.3 - SOFTWARE
- 1.5 - SPECIFICATIONS
- 1.6 - ACCESSORIES
- 1.7 - SAFETY PRECAUTIONS AND MAINTENANCE
- 1.7.1 - Care of the camera
- 1.7.2 - Regular checks
- 1.7.3 - Annual electrical safety checks
- 1.7.4 - Replacement parts
- 1.7.5 - Fuse replacement
- 1.7.6 - Working with electronics
- 1.7.7 - Condensation
- 1.7.8 - Dew Point graph
- 1.7.9 - EM Gain ageing
- 1.7.10 - Minimizing particulate contamination
- 2.1 - INSTALLING THE HARDWARE
- 2.1.1- PC requirements
- 2.2 - INSTALLING ANDOR SOLIS SOFTWARE - WINDOWS O/S(XP/VISTA/SEVEN)
- 2.3 - NEW HARDWARE WIZARD
- 2.5 - WATER PIPE CONNECTORS
- 2.6 - MOUNTING POSTS
- 2.7 - COOLING
- 2.8 - START-UP DIALOG
- 3.1 - EMCCD OPERATION
- 3.1.1 - Structure of an EMCCD
- 3.1.2 - EM Gain & Read Noise
- 3.1.3 - EM Gain ON vs EM Gain OFF
- 3.1.4 - Multiplicative Noise Factor and Photon Counting
- 3.1.5 - EM Gain dependence and stability
- 3.1.6 - RealGain: Real and Linear gain
- 3.1.7 - EM Gain Ageing: What causes it and how is it countered?
- 3.1.8 - Gain and signal restrictions
- 3.1.9 - EMCAL
- 3.2 - COOLING
- 3.2.1 - Cooling options
- 3.2.2 - Heat generated in the EMCCD
- 3.2.3 Heatsink “hot side“ temperature
- 3.2.4 - Fan settings
- 3.3 - SENSOR READOUT OPTIMIZATION
- 3.3.1 - Sensor Pre-amp options
- 3.3.2 - Variable Horizontal Readout Rate
- 3.3.3 - Variable Vertical Shift Speed
- 3.3.4 - Output amplifier selection
- 3.3.5 - Baseline Optimization
- 3.3.5.1 - Baseline Clamp
- 3.3.6 - Binning and Sub Image options
- 3.4 - ACQUISITION OPTIONS
- 3.4.1 - Capture Sequence in Frame Transfer (FT) Mode
- 3.4.1.1 - Points to consider when using FT Mode
- 3.4.2 - Capture Sequence in Non-Frame Transfer Mode (NFT) with an FT EMCCD
- 3.4.2.1 - Points to note about using an FT EMCCD as a standard EMCCD
- 3.4.3 - Capture Sequence for Fast Kinetics (FK) with an FT EMCCD
- 3.4.3.1 - Points to consider when using Fast Kinetics mode
- 3.4.4 - Keep Clean Cycles
- 3.5 - TRIGGERING OPTIONS
- 3.5.1 - Triggering options in Frame Transfer (FT) mode
- 3.5.1.1 - Internal Triggering (FT)
- 3.5.1.2 - External Triggering (FT)
- 3.5.1.3 - External Exposure (FT)
- 3.5.2 - Triggering options in Non-Frame Transfer (NFT) mode
- 3.5.2.1 - Internal (NFT)
- 3.5.2.2 - External & Fast External (NFT)
- 3.5.2.3 - External Exposure (NFT)
- 3.5.2.4 - Software trigger (NFT)
- 3.5.3 - Trigger options in Fast Kinetics (FK) mode
- 3.5.3.1 - Internal (FK)
- 3.5.3.2 - External (FK)
- 3.5.3.3 - External Start (FK)
- 3.6 - SHUTTERING
- 3.7 - COUNT CONVERT
- 3.8 - OPTACQUIRE
- 3.8.1 - OptAcquire modes
- 3.9 - PUSHING FRAME RATES WITH CROPPED SENSOR MODE
- 3.9.1 - Cropped Sensor Mode Frame Rates
- 3.10 - ADVANCED PHOTON COUNTING IN EMCCDs
- 3.10.1 - Photon Counting by Post-Process
- 3.11 - SPURIOUS NOISE FILTER
- 4.1 - EMCCD TECHNOLOGY
- 4.1.1 - What is an Electron Multiplying CCD?
- 4.1.2 - Does EMCCD technology eliminate Read Out Noise?
- 4.1.3 - How sensitive are EMCCDs?
- 4.1.4 - What applications are EMCCDs suitable for?
- 4.1.5 - What is Andor Technology's experience with EMCCDs?
- 4.2 - EMCCD SENSOR
- 4.3 - VACUUM HOUSING
- 4.3.1 - Thermoelectric cooler
- 4.4 – USB 2.0 INTERFACE
- 4.5 - OUTGASSING
- 4.6 - EXTERNAL I/O
- 4.7 - SIGNAL DIAGRAMS
- 4.8 - CAMERALINK
- SECTION 5: TROUBLESHOOTING
- 5.1 - UNIT DOES NOT SWITCH ON
- 5.2 - SUPPORT DEVICE NOT RECOGNISED WHEN PLUGGED INTO PC
- 5.3 - TEMPERATURE TRIP ALARM SOUNDS (CONTINUOUS TONE)
- 5.4 - CAMERA HIGH FIFO FILL ALARM
- 5.5 - USE OF MULTIPLE HIGH SPEED USB 2.0 I/O ON ONE CAMERA
- A.1 - GLOSSARY
- A.1.1 - Readout sequence of an EMCCD
- A.1.2 - Accumulation
- A.1.3 - Acquisition
- A.1.4 - A/D Conversion
- A.1.5 - Background
- A.1.6 - Binning
- A.1.7 - Counts
- A.1.8 - Dark Signal
- A.1.9 - Detection Limit
- A.1.10 - Exposure Time
- A.1.11 - Frame Transfer
- A.1.12 - NOISE
- A.1.12.1 - Pixel Noise
- A.1.12.1.1 - Readout Noise
- A.1.12.1.2 - Shot Noise
- A.1.12.1.2.A - Shot Noise from the Signal
- A.1.12.1.2.B - Shot Noise from the Dark Signal
- A.1.12.1.3 - Calculation of Total Pixel Noise
- A.1.12.2 - Fixed Pattern Noise
- A.1.13 - Quantum Efficiency/Spectral Response
- A.1.14 - Readout
- A.1.15 - Saturation
- A.1.16 - Scans (Keep Clean and Acquired)
- A.1.17 - Shift Register
- A.1.18 - Signal To Noise Ratio
- B - MECHANICAL DIMENSIONS
- C - DECLARATION OF CONFORMITY
- D - HARDWARE AND SOFTWARE WARRANTY SERVICE
- D.1 - SERVICE DESCRIPTION
- D.2 - Access to Service
- D.3 - Hardware Remediation
- D.4 - Software Remediation
- E - THE WASTE ELECTRONIC AND ELECTRICAL EQUIPMENT REGULATIONS 2006 (WEEE)
Version 1.1 rev Jan 2013
Page 38
iXon Ultra
Features and Functionality
During an acquisition using a conventional Frame Transfer CCD (FT CCD), the image area is exposed to light and an
image is captured. This image, in the form of an electronic charge, is then automatically shifted downwards behind the
masked region of the chip before being read out. To read out the sensor, charge is moved vertically into the readout
register, and then horizontally from the readout register into the output node of the amplier. As stated previously,
the readout register is extended to include the multiplication (gain) register. The amplication occurs in this register
through the scheme highlighted in Figure 8 below. When moving charge through a register, there is a very tiny, but nite
probability that the charges being transferred can create additional charge by a process known as “impact ionization”.
Impact ionization occurs when a charge is clocked and has sufcient energy to create another electron-hole pair in the
conduction band and by this process amplication occurs. To make this process viable, EMCCD’s optimize the process
in two ways:
1. The probability of any one charge creating a secondary electron is increased by giving the initial electron charge
more energy. This is typically done by replacing one of the electrodes (phases) of this readout section with two
electrodes. The rst is held at a xed potential, and the second is operated as normal, except that much higher
voltages are used than are necessary for charge transfer alone. The large electric eld generated between
the xed voltage electrode and the clocked electrode is sufciently high for the electrons to cause “impact
ionization” as they transfer. This impact ionization causes the generation of new electrons, i.e. multiplication or
gain.
2. The EMCCD is designed with hundreds of cells or pixels in which impact ionization can occur and although the
probability of amplication or multiplication in any one pixel is small (only around x1.01 to x1.015 times) over
the entire length of the EM register, the probability is very high and substantial gains of up to thousands can be
achieved.
Figure 8: Gain register operation