User's Manual
SARA-R4 series - System Integration Manual
UBX-16029218 - R03 Design-in
Page 55 of 94
Guidelines for single SIM chip connection
A solderable SIM chip (M2M UICC Form Factor) has to be connected the SIM card interface of SARA-R4 series
modules as described in Figure 25.
Follow these guidelines to connect the module to a solderable SIM chip without SIM presence detection:
Connect the UICC / SIM contacts C1 (VCC) to the VSIM pin of the module.
Connect the UICC / SIM contact C7 (I/O) to the SIM_IO pin of the module.
Connect the UICC / SIM contact C3 (CLK) to the SIM_CLK pin of the module.
Connect the UICC / SIM contact C2 (RST) to the SIM_RST pin of the module.
Connect the UICC / SIM contact C5 (GND) to ground.
Provide a 100 nF bypass capacitor (e.g. Murata GRM155R71C104K) at the SIM supply line close to the
relative pad of the SIM chip, to prevent digital noise.
Provide a bypass capacitor of about 22 pF to 47 pF (e.g. Murata GRM1555C1H470J) on each SIM line, to
prevent RF coupling especially in case the RF antenna is placed closer than 10 - 30 cm from the SIM lines.
Limit capacitance and series resistance on each SIM signal to match the SIM requirements (27.7 ns is the
maximum allowed rise time on clock line, 1.0 µs is the maximum allowed rise time on data and reset lines).
SARA-R4 series
41
VSIM
39
SIM_IO
38
SIM_CLK
40
SIM_RST
SIM CHIP
SIM Chip
Bottom View
(contacts side)
C1
VPP (C6)
VCC (C1)
IO (C7)
CLK (C3)
RST (C2)
GND (C5)
C2 C3 C5
U1
C4
2
8
3
6
7
1
C1 C5
C2 C6
C3 C7
C4 C8
8
7
6
5
1
2
3
4
Figure 25: Application circuits for the connection to a single solderable SIM chip, with SIM detection not implemented
Reference
Description
Part Number - Manufacturer
C1, C2, C3, C4
47 pF Capacitor Ceramic C0G 0402 5% 50 V
GRM1555C1H470JA01 - Murata
C5
100 nF Capacitor Ceramic X7R 0402 10% 16 V
GRM155R71C104KA01 - Murata
U1
SIM chip (M2M UICC Form Factor)
Various Manufacturers
Table 21: Example of components for the connection to a single solderable SIM chip, with SIM detection not implemented