User's Manual

TOBY-R2 series - System Integration Manual
UBX-16010572 - R04 Design-in
Page 100 of 147
TOBY-R2 series
C1
FIRST
SIM CARD
VPP (C6)
VCC (C1)
IO (C7)
CLK (C3)
RST (C2)
GND (C5)
C2 C3 C5
J1
C4
D1 D2 D3 D4
GND
U1
59
VSIM
VSIM
1VSIM
2VSIM
VCC
C11
4PDT
Analog
Switch
3V8
57
SIM_IO
DAT
1DAT
2DAT
56
SIM_CLK
CLK
1CLK
2CLK
58
SIM_RST
RST
1RST
2RST
SEL
SECOND
SIM CARD
VPP (C6)
VCC (C1)
IO (C7)
CLK (C3)
RST (C2)
GND (C5)
J2
C6 C7 C8 C10
C9
D5 D6 D7 D8
Application
Processor
GPIO
R1
Figure 49: Application circuit for the connection to two removable SIM cards, with SIM detection not implemented
Reference
Description
Part Number – Manufacturer
C1 – C4, C6 – C9
33 pF Capacitor Ceramic C0G 0402 5% 25 V
GRM1555C1H330JZ01 – Murata
C5, C10, C11
100 nF Capacitor Ceramic X7R 0402 10% 16 V
GRM155R71C104KA01 – Murata
D1 – D8
Very Low Capacitance ESD Protection
PESD0402-140 - Tyco Electronics
R1
47 k Resistor 0402 5% 0.1 W
RC0402JR-0747KL- Yageo Phycomp
J1, J2
SIM Card Holder, 6 + 2 p., with card presence switch
CCM03-3013LFT R102 - C&K Components
U1
4PDT Analog Switch,
with Low On-Capacitance and Low On-Resistance
FSA2567 - Fairchild Semiconductor
Table 38: Example of components for the connection to two removable SIM cards, with SIM detection not implemented
2.5.2 Guidelines for SIM layout design
The layout of the SIM card interface lines (VSIM, SIM_CLK, SIM_IO, SIM_RST may be critical if the SIM card is
placed far away from the TOBY-R2 series modules or in close proximity to the RF antenna: these two cases
should be avoided or at least mitigated as described below.
In the first case, the long connection can cause the radiation of some harmonics of the digital data frequency as
any other digital interface. It is recommended to keep the traces short and avoid coupling with RF line or
sensitive analog inputs.
In the second case, the same harmonics can be picked up and create self-interference that can reduce the
sensitivity of LTE/3G/2G receiver channels whose carrier frequency is coincidental with harmonic frequencies. It is
strongly recommended to place the RF bypass capacitors suggested in Figure 46 near the SIM connector.
In addition, since the SIM card is typically accessed by the end user, it can be subjected to ESD discharges. Add
adequate ESD protection as suggested to protect module SIM pins near the SIM connector.
Limit capacitance and series resistance on each SIM signal to match the SIM specifications. The connections
should always be kept as short as possible.
Avoid coupling with any sensitive analog circuit, since the SIM signals can cause the radiation of some harmonics
of the digital data frequency.