Specifications

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9-5.GPIODC Characteristics
Parameter Test Condition Typical Unit
GPIO VOH at 8-mA load IOCURR = 2, high-drive GPIOs only 2.68 V
GPIO VOL at 8-mA load IOCURR = 2, high-drive GPIOs only 0.33 V
GPIO VOH at 4-mA load IOCURR = 1 2.72 V
GPIO VOL at 4-mA load IOCURR = 1 0.28 V
9-6. Timing Requirements
Description MIN
NO
M
MA
X
UNIT
Rising supply-voltage slew rate 0 100 mV/uS
Falling supply-voltage slew rate 0 20
mV/uS
Falling supply-voltage slew rate, with low-power flash settings(1) 3
mV/uS
Positive temperature gradient in
standby(2)
No limitation for negative
temperature gradient, or
outside standby mode
5 °C/s
CONTROL INPUT AC CHARACTERISTICS(3)
RESET_N low duration
1
uS
(1) For smaller coin cell batteries, with high worst-case end-of-life equivalent source resistance, a
22-μF VDDS input capacitor must be used to ensure compliance with this slew rate.
(2) Applications using RCOSC_LF as sleep timer must also consider the drift in frequency caused by
a change in temperature .
9-7. Switching Characteristics
Measured with Tc = 25°C, VDDS = 3.0 V, unless otherwise noted.
P
arameter
T
est Condition
M
in
T
ypical
M
ax
U
nit
W
ake
up
and
T
iming
Idle
→
Active
14
μs
Standby
→
Active
151
μs
Shutdown
→
Active
1015
μs
10. Block Diagram