Datasheet

TMCC160 motionCookie™ (Rev. 1.00 / 2015-Nov-16)
© 2015 TRINAMIC Motion Control GmbH & Co. KG, Hamburg, Germany
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→ A low pass with cut off frequency of approximately 16MHz should be placed
on TMCC160 input RS+, RS- to filter high frequency.
→ Place RC low pass close to the TMCC160.
Gain of the internal current sense amplifier can be configured by software.
Following gain values are available:
Gain values: 8/ 10.3/ 13.3/ 17.2/ 22.2/ 28.7/ 37/ 47.8
The accuracy of the amplifier is ±3%. The maximum input voltage between RS+
and RS- depends on the configured amplifier gain:


=
1.48

Formulae 3: Maximum Input Voltage Calculation
With the given 

it is possible to calculate the sense resistor for a given
maximum target current. Calculation formula for 

is given below. The
maximum current can be measured in both directions depending on the power
MOSFET state.


=
1.48


_
Formulae 4: Single Shunt Sense Resistor Calculation
To protect each half bridge against cross-conduction during switching high- and
low-side MOSFETs, TMCC160 includes a programmable dead time delay between
high- and low-side MOSFET of the same phase. During the dead time high- and
low-side MOSFETs are off. The dead time can be configured in software.
Dead time:
0.00µS/ 0.51µS/ 0.80µS/ 1.10µS/ 1.67µS/ 2.30µS/ 3.40µS/ 6.9µS
i To avoid high losses during switch event a proper dead time adaption is
needed. A value of 1.1µS is a good start value for further tuning.
TMCC160 provides an integrated 3-phase gate driver for pure N-channel
MOSSFET bridge. The gate driver is capable to drive the high- and low-side gate
with up to 1A source, sink. This allows fast and high efficient switching of power
MOSFETs with a gate charge up to 350nC. To drive the high- and low-side
MOSFETs down to a supply voltage of 7V a charge pump is integrated. Gate-
source voltage of high- and low-side gate driver output is 12V.
The duration of the switching event depends on the total gate charge of the
MOSFET and can be calculated with the formula below.
4.5.7
Sense Resistor
Selection
4.5.8
Dead Time Logic
4.5.9
P
ower MOSFET
S
election